Reinforcement of power factor in N-type multiphase thin film of Si1−x−yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity

2021 ◽  
Vol 119 (11) ◽  
pp. 113903
Author(s):  
Huajun Lai ◽  
Ying Peng ◽  
Jie Gao ◽  
Haili Song ◽  
Masashi Kurosawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Power Factor

scholarly journals A comparative study on thermoelectric properties of ZnO bulks and thin films

2020 ◽  
Vol 23 (4) ◽  
pp. 788-794
Author(s):  
Dai Cao Truong ◽  
Anh Tuan Thanh Pham ◽  
Oanh Kieu Truong Le ◽  
Dung Van Hoang ◽  
Truong Huu Nguyen ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
High Temperature ◽  
Comparative Study ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
The Comparative Study

Introduction: Zinc oxide (ZnO) is well-known as a promising thermoelectric material owing to its safety, inexpensiveness, and thermal stability. This research provides an overview of thermoelectric potentials, including structure, electrical conductivity, Seebeck coefficient, and power factor of pure ZnO semiconductor synthesized in bulk and thin-film forms. Methods: The ZnO bulk was synthesized by solid-state reaction at high temperature, while the thin film was prepared by d.c. magnetron sputtering technique. The temperature-dependent thermoelectric properties of all the samples were measured by the Seebeck LSR-3 system. The crystallographic and surface morphological information of the samples were obtained by using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM), respectively. Results: The XRD results confirm that both the bulk and thin-film have polycrystalline structure and characteristics of hexagonal-wurtzite ZnO. Through the FESEM observation, the bulk is well densified under high-temperature condition, while the thin-film achieve good orientation and close-packed grains. At 573 K, the obtained thermoelectric properties (electrical conductivity, Seebeck coefficient, and power factor) are respectively 352.4 S/cm, -89.5 µV/K and 282.5 µW/mK2 for the ZnO bulk; and 289 S/cm, -113.8 µV/K and 374.3 µW/mK2 for the ZnO film. Conclusion: The comparative study shows the good thermoelectric potential of ZnO material in both forms of bulk and thin film. Among them, the thin film has better results, especially in the Seebeck coefficient and power factor than one.

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

scholarly journals Preparation and Thermoelectric Properties of Graphite/poly(3,4-ethyenedioxythiophene) Nanocomposites

Energies ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2849 ◽  
Author(s):  
Yong Du ◽  
Haixia Li ◽  
Xuechen Jia ◽  
Yunchen Dou ◽  
Jiayue Xu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Oxidative Polymerization ◽  
Polymerization Process ◽  
Measurement Temperature ◽  
Temperature Range ◽  
Different Content

Graphite/poly(3,4-ethyenedioxythiophene) (PEDOT) nanocomposites were prepared by an in-situ oxidative polymerization process. The electrical conductivity and Seebeck coefficient of the graphite/PEDOT nanocomposites with different content of graphite were measured in the temperature range from 300 K to 380 K. The results show that as the content of graphite increased from 0 to 37.2 wt %, the electrical conductivity of the nanocomposites increased sharply from 3.6 S/cm to 80.1 S/cm, while the Seebeck coefficient kept almost the same value (in the range between 12.0 μV/K to 15.1 μV/K) at 300 K, which lead to an increased power factor. The Seebeck coefficient of the nanocomposites increased from 300 K to 380 K, while the electrical conductivity did not substantially depend on the measurement temperature. As a result, a power factor of 3.2 μWm−1 K−2 at 380 K was obtained for the nanocomposites with 37.2 wt % graphite.

scholarly journals Influence of crystallinity on the thermoelectric power factor of P3HT vapour-doped with F4TCNQ

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1593-1599 ◽  
Author(s):  
Jonna Hynynen ◽  
David Kiefer ◽  
Christian Müller
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Thermoelectric Power Factor ◽  
Order Of Magnitude

The crystallinity of P3HT strongly benefits the electrical conductivity but not Seebeck coefficient, leading to an increase in power factor by one order of magnitude.

Carbon nanotubes enhanced Seebeck coefficient and power factor of rutile TiO2

2015 ◽  
Vol 17 (12) ◽  
pp. 8120-8124 ◽  
Author(s):  
Yao-Cheng Lai ◽  
Hsin-Jung Tsai ◽  
Chia-I Hung ◽  
Hiroyuki Fujishiro ◽  
Tomoyuki Naito ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Filling Fraction ◽  
Rutile Tio2

Ti–C substitution occurs when carbon nanotubes were thermally dispersed in rutile TiO2 and the electrical conductivity as well as Seebeck coefficient were simultaneously promoted at a low filling fraction of tubes.

TEXTURED STRUCTURE AND ANISOTROPIC THERMOELECTRIC PROPERTIES OF Ca2.7Bi0.3Co4O9 OXIDE PREPARED BY CONVENTIONAL SOLID-STATE REACTION

2009 ◽  
Vol 23 (01) ◽  
pp. 87-95 ◽  
Author(s):  
HAOSHAN HAO ◽  
QINGLIN HE ◽  
CHANGQING CHEN ◽  
HONGWEI SUN ◽  
XING HU
Keyword(s):  
Electrical Conductivity ◽  
Grain Size ◽  
Solid State ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Bi Doping

Ca 3-x Bi x Co 4 O 9(x = 0.0, 0.3) samples have been prepared at 1223 K by conventional solid-state reaction method. XRD and SEM investigations reveal that c-axis-oriented structure could be formed in Ca 2.7 Bi 0.3 Co 4 O 9 samples, whereas grains in Ca 3 Co 4 O 9 samples distribute randomly. Moreover, Bi doping increases the grain size and relative density of Ca 2.7 Bi 0.3 Co 4 O 9. The electrical conductivity along the ab plane for Ca 2.7 Bi 0.3 Co 4 O 9 is about four times as large as that along the c-axis, but the Seebeck coefficient is almost isotropic, which leads to a remarkable rise of the power factor in ab plane for Ca 2.7 Bi 0.3 Co 4 O 9 compared with untextured Ca 3 Co 4 O 9. The textured structure in Ca 2.7 Bi 0.3 Co 4 O 9 sample should be attributed to the effect of Bi doping.

Carrier dilution in TiSe2 based intergrowth compounds for enhanced thermoelectric performance

2015 ◽  
Vol 3 (40) ◽  
pp. 10451-10458 ◽  
Author(s):  
S. R. Bauers ◽  
D. R. Merrill ◽  
D. B. Moore ◽  
D. C. Johnson
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Thermoelectric Performance ◽  
Thermoelectric Power Factor

Synthesis and electrical properties of kinetically stabilized (PbSe)1+δ(TiSe2)n thin-film intergrowths are reported for 1 ≤ n ≤ 18. The carriers donated to the TiSe2 from PbSe are diluted with increasing n, leading to a systematic increase in the Seebeck coefficient and thermoelectric power factor.

Bi-Sb-Te Based Thin Film Thermoelectric Generator

2012 ◽  
Vol 538-541 ◽  
pp. 60-63 ◽  
Author(s):  
Zhao Kun Cai ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seebeck Coefficient ◽  
Output Power ◽  
Power Factor ◽  
Thermoelectric Generator ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thermoelectric Thin Films ◽  
P Type

N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.

scholarly journals Understanding the effect of thickness on the thermoelectric properties of Ca3Co4O9 thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yinong Yin ◽  
Ashutosh Tiwari
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Functional Dependence ◽  
Island Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Power Measurements ◽  
Single Crystal Sapphire

AbstractWe are reporting the effect of thickness on the Seebeck coefficient, electrical conductivity and power factor of Ca3Co4O9 thin films grown on single-crystal Sapphire (0001) substrate. Pulsed laser deposition (PLD) technique was employed to deposit Ca3Co4O9 films with precisely controlled thickness values ranging from 15 to 75 nm. Structural characterization performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the growth of Ca3Co4O9 on Sapphire (0001) follows the island growth-mode. It was observed that in-plane grain sizes decrease from 126 to 31 nm as the thickness of the films decreases from 75 to 15 nm. The thermoelectric power measurements showed an overall increase in the value of the Seebeck coefficient as the films’ thickness decreased. The above increase in the Seebeck coefficient was accompanied with a simultaneous decrease in the electrical conductivity of the thinner films due to enhanced scattering of the charge carriers at the grain boundaries. Because of the competing mechanisms of the thickness dependence of Seebeck coefficient and electrical conductivity, the power factor of the films showed a non-monotonous functional dependence on thickness. The films with the intermediate thickness (60 nm) showed the highest power factor (~ 0.27 mW/m-K2 at 720 K).

scholarly journals An enhanced power factor via multilayer growth of Ag-doped skutterudite CoSb3 thin films

2018 ◽  
Vol 5 (6) ◽  
pp. 1409-1414 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Meng Wei ◽  
Jing-Ting Luo ◽  
Fu Li ◽  
Guang-Xing Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Ag Doping

The Seebeck coefficient and electrical conductivity of the CoSb3 thin films are enhanced after Ag doping, leading to substantial enhancement of the power factor.

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