Publisher’s Note: “Proposal for energy efficient spin transfer torque-magnetoresistive random access memory device” [J. Appl. Phys. 129, 223901 (2021)]

Abhishek Sharma; Ashwin A. Tulapurkar; Bhaskaran Muralidharan

doi:10.1063/5.0062142

Publisher’s Note: “Proposal for energy efficient spin transfer torque-magnetoresistive random access memory device” [J. Appl. Phys. 129, 223901 (2021)]

Journal of Applied Physics ◽

10.1063/5.0062142 ◽

2021 ◽

Vol 130 (3) ◽

pp. 039902

Author(s):

Abhishek Sharma ◽

Ashwin A. Tulapurkar ◽

Bhaskaran Muralidharan

Keyword(s):

Energy Efficient ◽

Random Access ◽

Random Access Memory ◽

Memory Device ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Proposal for energy efficient spin transfer torque-magnetoresistive random access memory device

Journal of Applied Physics ◽

10.1063/5.0052693 ◽

2021 ◽

Vol 129 (23) ◽

pp. 233901

Author(s):

Abhishek Sharma ◽

Ashwin A. Tulapurkar ◽

Bhaskaran Muralidharan

Keyword(s):

Energy Efficient ◽

Random Access ◽

Random Access Memory ◽

Memory Device ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology

Advances in Non-Volatile Memory and Storage Technology ◽

10.1016/b978-0-08-102584-0.00008-5 ◽

2019 ◽

pp. 237-281 ◽

Cited By ~ 4

Author(s):

T. Hanyu ◽

T. Endoh ◽

Y. Ando ◽

S. Ikeda ◽

S. Fukami ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

Journal of Applied Physics ◽

10.1063/1.4869828 ◽

2014 ◽

Vol 115 (17) ◽

pp. 172607 ◽

Cited By ~ 64

Author(s):

K. Ando ◽

S. Fujita ◽

J. Ito ◽

S. Yuasa ◽

Y. Suzuki ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Technology Trend of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM)

Journal of the Korean Magnetics Society ◽

10.4283/jkms.2009.19.1.022 ◽

2009 ◽

Vol 19 (1) ◽

pp. 22-27

Author(s):

D.K. Kim ◽

J.U. Cho ◽

S.J. Noh ◽

Y.K. Kim

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory ◽

Technology Trend

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Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

Journal of Applied Physics ◽

10.1063/1.4908153 ◽

2015 ◽

Vol 117 (17) ◽

pp. 17B710 ◽

Cited By ~ 18

Author(s):

Kamaram Munira ◽

P. B. Visscher

Keyword(s):

Energy Barrier ◽

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)

SCIENTIA SINICA Physica, Mechanica & Astronomica ◽

10.1360/sspma2016-00185 ◽

2016 ◽

Vol 46 (10) ◽

pp. 107306 ◽

Cited By ~ 2

Author(s):

LeZhi WANG ◽

YouGuang ZHANG ◽

ZhaoHao WANG ◽

WeiSheng ZHAO ◽

ShouZhong PENG ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Etch residue removal of CoFeB using CO/NH3 reactive ion beam for spin transfer torque-magnetic random access memory device

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4936114 ◽

2015 ◽

Vol 33 (6) ◽

pp. 061212 ◽

Cited By ~ 4

Author(s):

Min Hwan Jeon ◽

Kyung Chae Yang ◽

Jin Woo Park ◽

Deok Hyun Yun ◽

Kyong Nam Kim ◽

...

Keyword(s):

Ion Beam ◽

Random Access ◽

Random Access Memory ◽

Memory Device ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Residue Removal ◽

Etch Residue

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Impact of Spin-Transfer Torque on the Write-Error Rate of a Voltage-Torque-Based Magnetoresistive Random-Access Memory

Physical Review Applied ◽

10.1103/physrevapplied.11.064019 ◽

2019 ◽

Vol 11 (6) ◽

Cited By ~ 4

Author(s):

Hiroshi Imamura ◽

Rie Matsumoto

Keyword(s):

Error Rate ◽

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Magnetoresistive Random Access Memory with Spin Transfer Torque Write (Spin RAM) - Present and Future -

10.7567/ssdm.2011.f-1-1 ◽

2011 ◽

Author(s):

H. Ohno

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetoresistive Random Access Memory

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Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fn09 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FN09

Author(s):

Taro Sasaki ◽

Tetsuo Endoh

Keyword(s):

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Cross Point ◽

Magnetoresistive Random Access Memory ◽

Point Type

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