scholarly journals Structural features of chalcogenide glass SiTe: An ovonic threshold switching material

APL Materials ◽  
2021 ◽  
Vol 9 (8) ◽  
pp. 081101
Author(s):  
Rongchuan Gu ◽  
Meng Xu ◽  
Run Yu ◽  
Chong Qiao ◽  
Cai-Zhuang Wang ◽  
...  
Keyword(s):  
Chalcogenide Glass ◽  
Structural Features ◽  
Threshold Switching ◽  
Switching Material

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

2017 ◽  
Vol 111 (25) ◽  
pp. 252102 ◽  
Author(s):  
Guangyu Liu ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Yan Liu ◽  
Tao Li ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Chalcogenide Glass ◽  
Threshold Switching

Reply to ‘‘Comment on ‘Threshold switching in chalcogenide‐glass thin films’ ’’

1984 ◽  
Vol 56 (2) ◽  
pp. 579-580 ◽  
Author(s):  
D. Adler ◽  
M. S. Shur ◽  
M. Silver ◽  
S. R. Ovshinsky
Keyword(s):  
Thin Films ◽  
Chalcogenide Glass ◽  
Threshold Switching

SET Characteristics of Phase Change Bridge Devices

2008 ◽  
Vol 1072 ◽  
Author(s):  
Daniel Krebs ◽  
Simone Raoux ◽  
Charles T. Rettner ◽  
Robert M. Shelby ◽  
Geoffrey W. Burr ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Random Access ◽  
Stable States ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Switching Material ◽  
The Difference ◽  
Memory Applications

ABSTRACTScaling studies have demonstrated that Phase Change Random Access Memory (PCRAM) is one of the most promising candidates for future non-volatile memory applications. The search for suitable phase change materials with optimized properties is therefore actively pursuit. In this paper, SET (crystallization) characteristics of an ultra fast switching material Ge15Sb85 in phase change memory bridge cell devices are presented. It was found that reproducible switching between two stable states with one decade resistance contrast and current pulses as short as 10 ns for SET and RESET (re-amorphization) operation is possible. Particular emphasis was placed on the difference in crystallization kinetics between the as-deposited and melt-quenched amorphous phase. Evidence is given for the existence of an electrical field as the critical parameter for threshold switching rather than a threshold voltage. For Ge15Sb85 a threshold switching field of 9MV/m was measured and it was shown that switching from the melt-quenched amorphous phase to the crystalline phase is about 600 times faster than crystallization from the as-deposited amorphous phase.

Threshold switching in chalcogenide‐glass thin films

1980 ◽  
Vol 51 (6) ◽  
pp. 3289-3309 ◽  
Author(s):  
D. Adler ◽  
M. S. Shur ◽  
M. Silver ◽  
S. R. Ovshinsky
Keyword(s):  
Thin Films ◽  
Chalcogenide Glass ◽  
Threshold Switching

Threshold switching in chalcogenide glass films

1973 ◽  
Vol 22 (5) ◽  
pp. 230-231 ◽  
Author(s):  
S.H. Lee ◽  
H.K. Henisch
Keyword(s):  
Chalcogenide Glass ◽  
Threshold Switching ◽  
Glass Films

Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

2017 ◽  
Vol 38 (5) ◽  
pp. 568-571 ◽  
Author(s):  
Yunmo Koo ◽  
Sangmin Lee ◽  
Seonggeon Park ◽  
Minkyu Yang ◽  
Hyunsang Hwang
Keyword(s):  
High Density ◽  
Memory Array ◽  
Threshold Switching ◽  
Switching Material

scholarly journals Structural features of spin-coated thin films of binary AsS− chalcogenide glass system

2015 ◽  
Vol 589 ◽  
pp. 642-648 ◽  
Author(s):  
J. Cook ◽  
S. Slang ◽  
R. Golovchak ◽  
H. Jain ◽  
M. Vlcek ◽  
...  
Keyword(s):  
Thin Films ◽  
Chalcogenide Glass ◽  
Structural Features ◽  
Glass System
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