Modulate the work function of Nb2CTx MXene as the hole transport layer for perovskite solar cells

2021 ◽  
Vol 119 (3) ◽  
pp. 033506
Author(s):  
Jiankai Zhang ◽  
Chengwen Huang ◽  
Huangzhong Yu
2016 ◽  
Vol 30 (27) ◽  
pp. 1650341 ◽  
Author(s):  
Quanrong Deng ◽  
Yiqi Li ◽  
Lian Chen ◽  
Shenggao Wang ◽  
Geming Wang ◽  
...  

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.


Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 404
Author(s):  
Abdul Sami ◽  
Arsalan Ansari ◽  
Muhammad Dawood Idrees ◽  
Muhammad Musharraf Alam ◽  
Junaid Imtiaz

Perovskite inorganic-organic solar cells are fabricated as a sandwich structure of mesostructured TiO2 as electron transport layer (ETL), CH3NH3PbI3 as active material layer (AML), and Spiro-OMeTAD as hole transport layer (HTL). The crystallinity, structural morphology, and thickness of TiO2 layer play a crucial role to improve the overall device performance. The randomly distributed one dimensional (1D) TiO2 nanowires (TNWs) provide excellent light trapping with open voids for active filling of visible light absorber compared to bulk TiO2. Solid-state photovoltaic devices based on randomly distributed TNWs and CH3NH3PbI3 are fabricated with high open circuit voltage Voc of 0.91 V, with conversion efficiency (CE) of 7.4%. Mott-Schottky analysis leads to very high built-in potential (Vbi) ranging from 0.89 to 0.96 V which indicate that there is no depletion layer voltage modulation in the perovskite solar cells fabricated with TNWs of different lengths. Moreover, finite-difference time-domain (FDTD) analysis revealed larger fraction of photo-generated charges due to light trapping and distribution due to field convergence via guided modes, and improved light trapping capability at the interface of TNWs/CH3NH3PbI3 compared to bulk TiO2.


2021 ◽  
Author(s):  
Lie Chen ◽  
Bin Huang ◽  
Yujun Cheng ◽  
Hui Lei ◽  
Lin Hu ◽  
...  

A low-cost and efficient hole transport layer (HTL) material (TPE-CZ) with aggregation-induced emission (AIE) effect has been synthesized. Due to the AIE effect, perovskite solar cells with TPE-CZ as HTL...


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