scholarly journals A 10 mA, steady-state, charge exchange negative ion beam source

2021 ◽  
Author(s):  
I. Shikhovtsev ◽  
V. Amirov ◽  
K. Anikeeva ◽  
V. Davydenko ◽  
I. Emelev ◽  
...  
1998 ◽  
Author(s):  
R. S. Hemsworth ◽  
J. Bucalossi ◽  
C. Desgranges ◽  
P. Frank ◽  
M. Fumelli ◽  
...  
Keyword(s):  
Ion Beam ◽  

2008 ◽  
Vol 79 (2) ◽  
pp. 02A509 ◽  
Author(s):  
S. Takeuchi ◽  
M. Sasao ◽  
H. Sugawara ◽  
N. Tanaka ◽  
M. Kisaki ◽  
...  

1995 ◽  
Vol 396 ◽  
Author(s):  
Y. Park ◽  
Y.W. Ko ◽  
M.H. Sohn ◽  
S.I. Kim

AbstractA compact negative metal ion beam source for direct low energy metal ion beam depositions studies in ultra high vacuum (UHV) environment, has been developed. The ion source is based on SKION's Solid State Ion Beam Technology. The secondary negative metal ion beam is effectively produced by primary cesium positive ion bombardment (negative ion yield varies from 0.1-0.5 for carbon). The beam diameter is in the range of 0.2∼3.0 cm depending on the focusing and ion beam energy. The ion source produces negative ion currents of about 0.8 mA/cm2. The energy spread of the ion beam is less then ±5% of the ion beam energy. The energy of negative metal ion beam can be independently controlled in the range of 10-300 eV. Due to the complete solid state ion technology , the source can be operated while maintaining chamber pressures of less then 10-10 Torr.


2019 ◽  
Vol 30 (2) ◽  
pp. 277-285
Author(s):  
V. Antoni ◽  
F. Taccogna ◽  
P. Agostinetti ◽  
M. Barbisan ◽  
M. Cavenago ◽  
...  

2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato

2021 ◽  
Author(s):  
O. Sotnikov ◽  
A. Sanin ◽  
Yu. Belchenko ◽  
A. A. Ivanov ◽  
G. Abdrashitov ◽  
...  
Keyword(s):  
Ion Beam ◽  

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.


1983 ◽  
Vol 16 (21) ◽  
pp. 3993-4003 ◽  
Author(s):  
A Chetioui ◽  
K Wohrer ◽  
J P Rozet ◽  
A Jolly ◽  
C Stephan ◽  
...  

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