scholarly journals Fluorescence detection of a trapped ion with a monolithically integrated single-photon-counting avalanche diode

2021 ◽  
Vol 119 (15) ◽  
pp. 154002
Author(s):  
W. J. Setzer ◽  
M. Ivory ◽  
O. Slobodyan ◽  
J. W. Van Der Wall ◽  
L. P. Parazzoli ◽  
...  
Keyword(s):  
Fluorescence Detection ◽  
Single Photon ◽  
Photon Counting ◽  
Single Photon Counting ◽  
Avalanche Diode ◽  
Trapped Ion ◽  
Monolithically Integrated

scholarly journals Design and Implementation of a Compact Single-Photon Counting Module

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1131
Author(s):  
Ming Chen ◽  
Chenghao Li ◽  
Alan P. Morrison ◽  
Shijie Deng ◽  
Chuanxin Teng ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Dead Time ◽  
Detection Efficiency ◽  
Single Photon ◽  
Photon Counting ◽  
Reverse Bias Voltage ◽  
Single Photon Counting ◽  
Avalanche Diode ◽  
Silicon Based ◽  
Off Time

A compact single-photon counting module that can accurately control the bias voltage and hold-off time is developed in this work. The module is a microcontroller-based system which mainly consists of a microcontroller, a programmable negative voltage generator, a silicon-based single-photon avalanche diode, and an integrated active quench and reset circuit. The module is 3.8 cm × 3.6 cm × 2 cm in size and can communicate with the end user and be powered through a USB cable (5 V). In this module, the bias voltage of the single-photon avalanche diode (SPAD) is precisely controllable from −14 V ~ −38 V and the hold-off time (consequently the dead time) of the SPAD can be adjusted from a few nanoseconds to around 1.6 μs with a setting resolution of ∼6.5 ns. Experimental results show that the module achieves a minimum dead time of around 28.5 ns, giving a saturation counting rate of around 35 Mcounts/s. Results also show that at a controlled reverse bias voltage of 26.8 V, the dark count rate measured is about 300 counts/s and the timing jitter measured is about 158 ps. Photodetection probability measurements show that the module is suited for detection of visible light from 450 nm to 800 nm with a 40% peak photon detection efficiency achieved at around 600 nm.

scholarly journals Custom-Technology Single-Photon Avalanche Diode Linear Detector Array for Underwater Depth Imaging

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4850
Author(s):  
Aurora Maccarone ◽  
Giulia Acconcia ◽  
Ulrich Steinlehner ◽  
Ivan Labanca ◽  
Darryl Newborough ◽  
...  
Keyword(s):  
Linear Array ◽  
Imaging System ◽  
Single Photon ◽  
Photon Counting ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Central Wavelength ◽  
Depth Imaging ◽  
Single Photon Counting ◽  
Avalanche Diode

We present an optical depth imaging system suitable for highly scattering underwater environments. The system used the time-correlated single-photon counting (TCSPC) technique and the time-of-flight approach to obtain depth profiles. The single-photon detection was provided by a linear array of single-photon avalanche diode (SPAD) detectors fabricated in a customized silicon fabrication technology for optimized efficiency, dark count rate, and jitter performance. The bi-static transceiver comprised a pulsed laser diode source with central wavelength 670 nm, a linear array of 16 × 1 Si-SPAD detectors, with a dedicated TCSPC acquisition module. Cylindrical lenses were used to collect the light scattered by the target and image it onto the sensor. These laboratory-based experiments demonstrated single-photon depth imaging at a range of 1.65 m in highly scattering conditions, equivalent up to 8.3 attenuation lengths between the system and the target, using average optical powers of up to 15 mW. The depth and spatial resolution of this sensor were investigated in different scattering conditions.

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

2008 ◽  
Vol 600-603 ◽  
pp. 1203-1206 ◽  
Author(s):  
Jun Hu ◽  
Xiao Bin Xin ◽  
Petre Alexandrov ◽  
Jian Hui Zhao ◽  
Brenda L. VanMil ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Detection Efficiency ◽  
Single Photon ◽  
Photon Counting ◽  
Avalanche Breakdown ◽  
Single Photon Detection ◽  
Single Photon Counting ◽  
Avalanche Diode ◽  
Solar Blind ◽  
Avalanche Breakdown Voltage

This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and 95% of the breakdown voltage, the SPAD shows a low dark current of 57.2fA and 159fA, respectively. The quantum efficiency of 29.8% at 280nm and <0.007% at 400nm indicates a high UV-to-visible rejection ratio of >4300. Single photon counting measurement at 280nm shows that a single photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at the avalanche breakdown voltage of 116.8V.

Single-photon counting at 950–1300 nm: using InGaAsP photocathode–GaAs avalanche diode hybrid photomultiplier tubes

2009 ◽  
Vol 56 (2-3) ◽  
pp. 284-295 ◽  
Author(s):  
Xiaoli Sun ◽  
Michael A. Krainak ◽  
William E. Hasselbrack ◽  
Ross A. La Rue ◽  
Derek F. Sykora
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Photomultiplier Tubes ◽  
Single Photon Counting ◽  
Avalanche Diode

Performance comparison of a single‐photon avalanche diode with a microchannel‐plate photomultiplier in time‐correlated single‐photon counting

1988 ◽  
Vol 59 (7) ◽  
pp. 1148-1152 ◽  
Author(s):  
T. Louis ◽  
G. H. Schatz ◽  
P. Klein‐Bölting ◽  
A. R. Holzwarth ◽  
G. Ripamonti ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Performance Comparison ◽  
Microchannel Plate ◽  
Single Photon Counting ◽  
Avalanche Diode
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