Large anisotropic Dzyaloshinskii–Moriya interaction in CoFeB(211)/Pt(110) films

AbstractDzyaloshinskii–Moriya interaction (DMI) is considered as one of the most important energies for specific chiral textures such as magnetic skyrmions. The keys of generating DMI are the absence of structural inversion symmetry and exchange energy with spin–orbit coupling. Therefore, a vast majority of research activities about DMI are mainly limited to heavy metal/ferromagnet bilayer systems, only focusing on their interfaces. Here, we report an asymmetric band formation in a superlattices (SL) which arises from inversion symmetry breaking in stacking order of atomic layers, implying the role of bulk-like contribution. Such bulk DMI is more than 300% larger than simple sum of interfacial contribution. Moreover, the asymmetric band is largely affected by strong spin–orbit coupling, showing crucial role of a heavy metal even in the non-interfacial origin of DMI. Our work provides more degrees of freedom to design chiral magnets for spintronics applications.

Download Full-text

Torque equilibrium spin wave theory of Raman scattering in an anisotropic triangular lattice antiferromagnet with Dzyaloshinskii-Moriya interaction

Physical Review B ◽

10.1103/physrevb.103.024417 ◽

2021 ◽

Vol 103 (2) ◽

Author(s):

Chao Shan ◽

Shangjian Jin ◽

Trinanjan Datta ◽

Dao-Xin Yao

Keyword(s):

Raman Scattering ◽

Spin Wave ◽

Triangular Lattice ◽

Wave Theory ◽

Spin Wave Theory ◽

Moriya Interaction ◽

Triangular Lattice Antiferromagnet

Download Full-text

Engineering Dzyaloshinskii-Moriya interaction in B20 thin-film chiral magnets

Physical Review Materials ◽

10.1103/physrevmaterials.2.074404 ◽

2018 ◽

Vol 2 (7) ◽

Cited By ~ 6

Author(s):

Emrah Turgut ◽

Hanjong Paik ◽

Kayla Nguyen ◽

David A. Muller ◽

Darrell G. Schlom ◽

...

Keyword(s):

Thin Film ◽

Moriya Interaction

Download Full-text

Interfacial Dzyaloshinskii-Moriya Interaction, Perpendicular Magnetic Anisotropy and damping in CoFeB/oxide-based systems

IEEE Transactions on Magnetics ◽

10.1109/tmag.2021.3088995 ◽

2021 ◽

pp. 1-1

Author(s):

I. Benguettat-El Mokhtari ◽

Y. Roussigne ◽

S. M. Cherif ◽

S. Auffret ◽

C. Baraduc ◽

...

Keyword(s):

Magnetic Anisotropy ◽

Perpendicular Magnetic Anisotropy ◽

Moriya Interaction

Download Full-text

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

Nature Communications ◽

10.1038/s41467-021-23414-3 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Ruyi Chen ◽

Qirui Cui ◽

Liyang Liao ◽

Yingmei Zhu ◽

Ruiqi Zhang ◽

...

Keyword(s):

Domain Wall ◽

Tunnel Junctions ◽

Low Power Consumption ◽

Stray Field ◽

Magnetic Memory ◽

Spin Orbit ◽

Theoretic Analysis ◽

Spintronic Devices ◽

Deterministic Switching ◽

Moriya Interaction

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

Download Full-text