A simulation-based study on water radiolysis species for 1H+, 4He2+, and 12C6+ ion beams with multiple ionization using Geant4-DNA

2021 ◽  
Vol 129 (24) ◽  
pp. 244702
Author(s):  
Kentaro Baba ◽  
Tamon Kusumoto ◽  
Shogo Okada ◽  
Masayori Ishikawa
Keyword(s):  
Ion Beams ◽  
Water Radiolysis ◽  
Simulation Based ◽  
Multiple Ionization

scholarly journals 3.2.1　Water Radiolysis with Ion Beams

RADIOISOTOPES ◽  
2019 ◽  
Vol 68 (4) ◽  
pp. 227-237
Author(s):  
Shinichi Yamashita
Keyword(s):  
Ion Beams ◽  
Water Radiolysis

Hydrogen peroxide yields in water radiolysis by high-energy ion beams at constant LET

2002 ◽  
Vol 65 (1) ◽  
pp. 53-61 ◽  
Author(s):  
V Wasselin-Trupin ◽  
G Baldacchino ◽  
S Bouffard ◽  
B Hickel
Keyword(s):  
Hydrogen Peroxide ◽  
High Energy ◽  
Ion Beams ◽  
Water Radiolysis

Production of HO2 and O2 by multiple ionization in water radiolysis by swift carbon ions

2005 ◽  
Vol 410 (4-6) ◽  
pp. 330-334 ◽  
Author(s):  
B. Gervais ◽  
M. Beuve ◽  
G.H. Olivera ◽  
M.E. Galassi ◽  
R.D. Rivarola
Keyword(s):  
Water Radiolysis ◽  
Carbon Ions ◽  
Multiple Ionization

Multiple ionization in the earlier stages of water radiolysis

1998 ◽  
Vol 43 (8) ◽  
pp. 2347-2360 ◽  
Author(s):  
G H Olivera ◽  
C Caraby ◽  
P Jardin ◽  
A Cassimi ◽  
L Adoui ◽  
...  
Keyword(s):  
Water Radiolysis ◽  
Multiple Ionization

Radio-enhancement by gold nanoparticles and their impact on water radiolysis for x-ray, proton and carbon-ion beams

2019 ◽  
Vol 64 (17) ◽  
pp. 175005 ◽  
Author(s):  
Benedikt Rudek ◽  
Aimee McNamara ◽  
Jose Ramos-Méndez ◽  
Hilary Byrne ◽  
Zdenka Kuncic ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Ion Beams ◽  
Water Radiolysis ◽  
Carbon Ion ◽  
X Ray

Axial Observation of X-Ray Spectra from a Beam-Foil Source

1988 ◽  
Vol 102 ◽  
pp. 339-342
Author(s):  
J.M. Laming ◽  
J.D. Silver ◽  
R. Barnsley ◽  
J. Dunn ◽  
K.D. Evans ◽  
...  
Keyword(s):  
Spectral Resolution ◽  
Heavy Ion ◽  
Ion Beams ◽  
Beam Axis ◽  
Doppler Broadening ◽  
X Ray ◽  
Beam Foil

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Sign in / Sign up

Export Citation Format

Share Document