scholarly journals Research on the leakage current at sidewall of mesa Ge/Si avalanche photodiode

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075320
Author(s):  
Junqin Zhang ◽  
Hongmei Lin ◽  
Meng Liu ◽  
Yintang Yang
Keyword(s):  
Leakage Current ◽  
Avalanche Photodiode

IIA-4 a high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current

1981 ◽  
Vol 28 (10) ◽  
pp. 1212-1212 ◽  
Author(s):  
S.R. Forrest ◽  
O.K. Kim ◽  
W.A. Bonner ◽  
R.G. Smith ◽  
G.F. Williams
Keyword(s):  
Leakage Current ◽  
Avalanche Photodiode ◽  
High Gain

A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current

1981 ◽  
Vol 39 (5) ◽  
pp. 402-404 ◽  
Author(s):  
O. K. Kim ◽  
S. R. Forrest ◽  
W. A. Bonner ◽  
R. G. Smith
Keyword(s):  
Leakage Current ◽  
Avalanche Photodiode ◽  
High Gain

INVESTIGATION HIGH SENSITIVE PHOTO DETECTOR DEVICE BASED ON THE AVALANCHE PHOTODIODE FOR OPTOELECTRONIC MEASURING SYSTEMS

2016 ◽  
Vol 2016 (6) ◽  
pp. 69-75
Author(s):  
I.O. Bragynets ◽  
◽  
O.G. Kononenko ◽  
Yu.О. Masjurenko ◽  
◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Measuring Systems

TMR Magnetic Sensor Array Module for Detecting Leakage Current in Lithium-ion Batteries

2017 ◽  
Vol 137 (8) ◽  
pp. 481-486
Author(s):  
Junichi Hayasaka ◽  
Kiwamu Shirakawa ◽  
Nobukiyo Kobayashi ◽  
Kenichi Arai ◽  
Nobuaki Otake ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Leakage Current ◽  
Sensor Array ◽  
Lithium Ion ◽  
Magnetic Sensor

Relationship between Leakage Current and Pollution Deposits on the Surface of Polymeric Insulator

2010 ◽  
Vol 130 (11) ◽  
pp. 1037-1041 ◽  
Author(s):  
Takuma Miyake ◽  
Yuya Seo ◽  
Tatsuya Sakoda ◽  
Masahisa Otsubo
Keyword(s):  
Leakage Current

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

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