Strain-tuning PtSe2 for high ON-current lateral tunnel field-effect transistors

2021 ◽  
Vol 119 (7) ◽  
pp. 073102
Author(s):  
Manasa Kaniselvan ◽  
Youngki Yoon
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
I. Gayduchenko ◽  
S. G. Xu ◽  
G. Alymov ◽  
M. Moskotin ◽  
I. Tretyakov ◽  
...  

AbstractThe rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/$$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.


2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya

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