Modulation of resistive switching properties of non-stoichiometric WO3−x based asymmetric MIM structure by interface barrier modification

2021 ◽  
Vol 129 (23) ◽  
pp. 235302
Author(s):  
Krishna Rudrapal ◽  
A. Mukherjee ◽  
V. Adyam ◽  
Ayan Roy Chaudhuri
Keyword(s):  
Resistive Switching ◽  
Interface Barrier

Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure

2014 ◽  
Vol 1061-1062 ◽  
pp. 333-336
Author(s):  
Yong Dan Zhu ◽  
Cheng Hu ◽  
An You Zuo
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Switching Behavior ◽  
Good Time ◽  
Charge Redistribution ◽  
Resistive Switching Behavior ◽  
Switching Performance ◽  
Nonvolatile Memories ◽  
Interface Barrier ◽  
Non Destructive

we report reproducible resistive switching performance and relevant physical mechanism of Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.

scholarly journals Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour

2019 ◽  
Vol 553 ◽  
pp. 682-687 ◽  
Author(s):  
Bai Sun ◽  
Tao Guo ◽  
Guangdong Zhou ◽  
Shubham Ranjan ◽  
Wentao Hou ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Interface Barrier ◽  
Switching Memory

Fabrication and Investigation of Ferroelectric Memristors with Various Synaptic Plasticities

2021 ◽  
Author(s):  
Qi Qin ◽  
Miaocheng Zhang ◽  
Suhao Yao ◽  
Xingyu Chen ◽  
Aoze Han ◽  
...  
Keyword(s):  
Resistive Switching ◽  
First Principles Calculation ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Von Neumann ◽  
Paired Pulse ◽  
Interface Barrier ◽  
Spike Time Dependent Plasticity ◽  
The Brain ◽  
Paired Pulse Depression

Abstract In the Post-Moore Era, the neuromorphic computing has been mainly focused on breaking the von Neumann bottlenecks. Memristor has been proposed as a key part for the neuromorphic computing architectures, which can be used to emulate the synaptic plasticities of human brain. Ferroelectric memristor is a breakthrough for memristive devices on account of its reliable-nonvolatile storage, low-write/read latency, and tunable-conductive states. However, among the reported ferroelectric memristors, the mechanisms of resistive-switching are still under debate. In addition, the research of emulation of the brain synapses using ferroelectric memristors needs to be further investigated. Herein, the Cu/PbZr0.52Ti0.48O3 (PZT)/Pt ferroelectric memristors have been fabricated. The devices are able to realize the transformation from threshold switching behaviors to resistive switching behaviors. The synaptic plasticities, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), paired-pulse depression (PPD), and spike time-dependent plasticity (STDP) have been mimicked by the PZT devices. Furthermore, the mechanisms of PZT devices based on the interface barrier and conductive filament models have been investigated by first-principles calculation. This work may contribute to the applications of ferroelectric memristors in neuromorphic computing systems.

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

scholarly journals Investigation of resistive switching in gallium oxide nanostructures formed by local anodic oxidation

2019 ◽  
Vol 1410 ◽  
pp. 012233 ◽  
Author(s):  
R V Tominov ◽  
N A Polupanov ◽  
V I Avilov ◽  
M S Solodovnik ◽  
N V Parshina ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Resistive Switching ◽  
Gallium Oxide ◽  
Oxide Nanostructures ◽  
Local Anodic Oxidation

Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction

2021 ◽  
Author(s):  
Zhenhua Wu ◽  
Yinxiao Feng ◽  
Yan Liu ◽  
Huilie Shi ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching
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