Gallium vacancy formation in oxygen annealed β-Ga2O3

2021 ◽  
Vol 129 (24) ◽  
pp. 245701
Author(s):  
Jani Jesenovec ◽  
Marc H. Weber ◽  
Christopher Pansegrau ◽  
Matthew D. McCluskey ◽  
Kelvin G. Lynn ◽  
...  
1996 ◽  
Vol 1 (1) ◽  
pp. 209-215
Author(s):  
N. S. Averkiev ◽  
A. A. Gutkin ◽  
S. Yu. Il’inskii ◽  
M. A. Reshchikov ◽  
V. E. Sedov

2018 ◽  
Vol 2 (6) ◽  
Author(s):  
Lipeng Zhang ◽  
Isaac Bredeson ◽  
Axiel Y. Birenbaum ◽  
P. R. C. Kent ◽  
Valentino R. Cooper ◽  
...  

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.


1996 ◽  
Vol 80 (2) ◽  
pp. 724-728 ◽  
Author(s):  
R. Würschum ◽  
E. A. Kümmerle ◽  
K. Badura‐Gergen ◽  
A. Seeger ◽  
Ch. Herzig ◽  
...  

2016 ◽  
Vol 55 (2) ◽  
pp. 021203 ◽  
Author(s):  
Tomoki Hiramatsu ◽  
Motoki Nakashima ◽  
Erumu Kikuchi ◽  
Noritaka Ishihara ◽  
Masashi Tsubuku ◽  
...  

1963 ◽  
Vol 129 (3) ◽  
pp. 1162-1168 ◽  
Author(s):  
R. P. Huebener ◽  
C. G. Homan

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