scholarly journals Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier

AIP Advances ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 055311
Author(s):  
Chuanfeng Xiang ◽  
Shuai Yao ◽  
Wu Lu ◽  
Xiaolong Li ◽  
Xin Yu ◽  
...  
Keyword(s):  
Dose Rate ◽  
Operational Amplifier ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Single Event ◽  
Single Event Transient ◽  
Low Dose Rate

Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity

2004 ◽  
Vol 51 (6) ◽  
pp. 3172-3177 ◽  
Author(s):  
M.R. Shaneyfelt ◽  
J.R. Schwank ◽  
D.M. Fleetwood ◽  
R.L. Pease ◽  
J.A. Felix ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Annealing Behavior ◽  
Low Dose Rate ◽  
Bipolar Devices

Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures

2004 ◽  
Vol 51 (6) ◽  
pp. 3773-3780 ◽  
Author(s):  
R.L. Pease ◽  
D.G. Platteter ◽  
G.W. Dunham ◽  
J.E. Seiler ◽  
H.J. Barnaby ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Low Dose Rate

Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

2011 ◽  
Vol 35 (2) ◽  
pp. 169-173 ◽  
Author(s):  
Wu Lu ◽  
Yu-Zhan Zheng ◽  
Yi-Yuan Wang ◽  
Di-Yuan Ren ◽  
Qi Guo ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Low Dose Rate

Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias

2005 ◽  
Vol 52 (6) ◽  
pp. 2265-2271 ◽  
Author(s):  
L. Tsetseris ◽  
R.D. Schrimpf ◽  
D.M. Fleetwood ◽  
R.L. Pease ◽  
S.T. Pantelides
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Common Origin ◽  
Negative Bias ◽  
Temperature Instability ◽  
Low Dose Rate ◽  
Bias Temperature Instability

GAIN DEGRADATION AND ENHANCED LOW-DOSE-RATE SENSITIVITY IN BIPOLAR JUNCTION TRANSISTORS

2004 ◽  
Vol 14 (02) ◽  
pp. 503-517 ◽  
Author(s):  
R. D. SCHRIMPF
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Surface Recombination ◽  
Rate Sensitivity ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Base Current ◽  
Low Dose Rate ◽  
Two Factors ◽  
Recombination Current

The current gain of irradiated bipolar junction transistors decreases due to increased recombination current in the emitter-base depletion region and the neutral base. This recombination current depends on the interaction of two factors: (1) decreased minority-carrier lifetime at the Si / SiO 2 interface or in the bulk Si and (2) changes in surface potential caused by charge in the oxide. In npn transistors, these two factors both result in increased base current, while in pnp devices, positive charge in the oxide moderates the increase in base current due to surface recombination. In some technologies, the amount of degradation that occurs at a given total dose increases as the dose rate decreases. This enhanced low-dose-rate sensitivity results from space-charge effects produced by slowly transporting holes and protons in the oxide that covers the emitterbase junction.

Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs

2014 ◽  
Vol 61 (6) ◽  
pp. 2915-2922 ◽  
Author(s):  
Zachary E. Fleetwood ◽  
Adilson S. Cardoso ◽  
Ickhyun Song ◽  
Edward Wilcox ◽  
Nelson E. Lourenco ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Fourth Generation ◽  
Low Dose Rate
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