Impact of buried oxide thickness in substrate-gate integrated silicon nanowire field-effect transistor biosensor performance for charge sensing

2021 ◽  
Author(s):  
Y. M. Tan ◽  
M. F. M. Fathil ◽  
M. N. M. Nuzaihan ◽  
N. Sabani ◽  
X. Y. Teoh ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Oxide Thickness ◽  
Charge Sensing ◽  
Buried Oxide ◽  
Effect Transistor

scholarly journals Design and Simulation of Silicon Nanowire Tunnel Field Effect Transistor

2021 ◽  
Author(s):  
Parveen Kumar ◽  
Balwinder Raj
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Oxide Thickness ◽  
Doping Profile ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Nanowire Structure

This paper analyses the different parameters of tunnel field-effect transistor (TFET) based on silicon Nanowire in vertical nature by using a Gaussian doping profile. The device has been designed using an n-channel P+-I-N+ structure for tunneling junction of TFET with gate-all-around (GAA) Nanowire structure. The gate length has been taken as 100 nm using silicon Nanowire to obtain the various parameters such as ON-current (ION), OFF-current (IOFF), current ratio, and Subthreshold slope (SS) by applying different values of work function at the gate, the radius of Nanowire and oxide thickness of the device. The simulations are performed on Silvaco TCAD which gives a better parametric analysis over conventional tunnel field-effect transistor.

Low-Noise Schottky Junction Trigate Silicon Nanowire Field-Effect Transistor for Charge Sensing

2019 ◽  
Vol 66 (9) ◽  
pp. 3994-4000 ◽  
Author(s):  
Xi Chen ◽  
Si Chen ◽  
Shi-Li Zhang ◽  
Paul Solomon ◽  
Zhen Zhang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Low Noise ◽  
Schottky Junction ◽  
Charge Sensing ◽  
Effect Transistor

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate

ACS Sensors ◽  
2019 ◽  
Vol 4 (2) ◽  
pp. 427-433 ◽  
Author(s):  
Xi Chen ◽  
Si Chen ◽  
Qitao Hu ◽  
Shi-Li Zhang ◽  
Paul Solomon ◽  
...  
Keyword(s):  
Noise Reduction ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Schottky Junction ◽  
Effect Transistor ◽  
Device Noise

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

scholarly journals CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

Materials ◽  
2018 ◽  
Vol 11 (5) ◽  
pp. 785 ◽  
Author(s):  
Duy Tran ◽  
Thuy Pham ◽  
Bernhard Wolfrum ◽  
Andreas Offenhäusser ◽  
Benjamin Thierry
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Technology Development ◽  
Silicon Nanowire ◽  
Biosensor Technology ◽  
Effect Transistor ◽  
Cmos Compatible

scholarly journals Numerical simulation of different silicon nanowire field-effect transistor channel lengths for biosensing application

2018 ◽  
Author(s):  
M. F. M. Fathil ◽  
M. H. M. Ghazali ◽  
M. K. Md Arshad ◽  
M. Nuzaihan M. N. ◽  
Sh. Nadzirah ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Transistor Channel ◽  
Effect Transistor ◽  
Channel Lengths
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