scholarly journals Unveiling the dopant segregation effect at hematite interfaces

2021 ◽  
Vol 118 (20) ◽  
pp. 201602
Author(s):  
Felipe C. de Lima ◽  
Gabriel R. Schleder ◽  
João B. Souza Junior ◽  
Flavio L. Souza ◽  
Fabrício B. Destro ◽  
...  
Keyword(s):  
Dopant Segregation ◽  
Segregation Effect

Growth of Semi-Insulating GaAs Crystal with Uniform Si Doping

2014 ◽  
Vol 1015 ◽  
pp. 675-678
Author(s):  
Shu Xian Chen ◽  
Jia Dong Hou ◽  
Xiao Ming Tan
Keyword(s):  
Dopant Concentration ◽  
Numerical Study ◽  
Crystallization Rate ◽  
New Method ◽  
Gaas Crystal ◽  
Dopant Distribution ◽  
Growth Interface ◽  
Dopant Segregation ◽  
Segregation Effect ◽  
Double Crucible

An improved double crucible method of melt replenishing to counteract the dopant segregation effect in order to grow homogeneous doped GaAs crystals is brought forward, and its validity and feasibility are demonstrated by analytical and numerical study. The numerical results show that the new method can suppress the increase of dopant concentration near the growth interface and can maintain the homogeneity of dopant distribution along the radial direction. The positions of replenishing melt exit almost have no effects on the axial and radial distribution homogeneity of dopant Si in the crystal. So the new method has many distinct advantages: it can improve the crystallization rate and size, the operation is flexible, etc.

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research

2009 ◽  
Vol 24 (2) ◽  
pp. 025022 ◽  
Author(s):  
Elena Pascual ◽  
María J Martín ◽  
Raúl Rengel ◽  
Guilhem Larrieu ◽  
Emmanuel Dubois
Keyword(s):  
Monte Carlo ◽  
Schottky Contacts ◽  
Carrier Injection ◽  
Dopant Segregation

The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina

2010 ◽  
Vol 101 (1) ◽  
pp. 95-101
Author(s):  
Sašo Šturm ◽  
Mehmet A. Gülgün ◽  
Gunther Richter ◽  
Francisco M. Morales ◽  
Rowland M. Cannon ◽  
...  
Keyword(s):  
Dopant Segregation
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