Enhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode

2021 ◽  
Vol 130 (1) ◽  
pp. 015302
Author(s):  
Hui Su ◽  
Wing Man Tang ◽  
Pui To Lai
Keyword(s):  
Thin Film ◽  
Phonon Scattering ◽  
Thin Film Transistor ◽  
Gate Electrode

The detection of polyamines by an extended gate-type organic transistor functionalized with a carboxylate attached 1,3,4-thiadiazole derivative

2021 ◽  
Author(s):  
Koichiro Asano ◽  
Yui Sasaki ◽  
Qi Zhou ◽  
Riho Mitobe ◽  
Wei Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pattern Recognition ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Gate Electrode ◽  
Organic Transistor ◽  
Thiadiazole Derivative

We herein report an extended gate-type organic thin-film transistor (OTFT)-based polyamine sensor and its application for pattern recognition. The extended-gate electrode was functionalized with a complex of copper(II) ions and...

Study on Light Induced Leakage Current Related to Amorphous Silicon TFT Design

2007 ◽  
Vol 124-126 ◽  
pp. 259-262
Author(s):  
Jae Hong Jeon ◽  
Kang Woong Lee
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Gate Electrode ◽  
Silicon Thin Film ◽  
Pattern Design ◽  
Conventional Design ◽  
The One

We investigated the effect of amorphous silicon pattern design regarding to light induced leakage current in amorphous silicon thin film transistor. In addition to conventional design, where amorphous silicon layer is protruding outside the gate electrode, we designed and fabricated amorphous silicon thin film transistors in another two types of bottom gated structure. The one is that the amorphous silicon layer is located completely inside the gate electrode and the other is that the amorphous silicon layer is protruding outside the gate electrode but covered completely by the source and drain electrode. Measurement of the light induced leakage current caused by backlight revealed that the design where the amorphous silicon is located inside the gate electrode was the most effective however the last design was also effective in reducing the leakage current about one order lower than that of the conventional design.

Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

2010 ◽  
Vol 31 (5) ◽  
pp. 437-439 ◽  
Author(s):  
Yu-Lun Lu ◽  
Fu-Kuo Hsueh ◽  
Kuo-Ching Huang ◽  
Tz-Yen Cheng ◽  
Jeff M Kowalski ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Gate Electrode ◽  
Dopant Activation

A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

2009 ◽  
Vol 42 (6) ◽  
pp. 065105 ◽  
Author(s):  
Jae-Hong Kwon ◽  
Jung-Hoon Seo ◽  
Sang-Il Shin ◽  
Byeong-Kwon Ju
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Gate Electrode

A dry-patterned Cu(Mg) alloy film as a gate electrode in a thin-film transistor liquid crystal display

2004 ◽  
Vol 33 (7) ◽  
pp. 780-785 ◽  
Author(s):  
H. J. Yang ◽  
Y. K. Ko ◽  
J. Jang ◽  
H. S. Soh ◽  
G. -S. Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Alloy Film ◽  
Mg Alloy ◽  
Gate Electrode

scholarly journals A highly porous and conductive composite gate electrode for OTFT sensors

RSC Advances ◽  
2019 ◽  
Vol 9 (13) ◽  
pp. 7278-7284 ◽  
Author(s):  
Soniya D. Yambem ◽  
Samantha Burns ◽  
Joshua N. Arthur ◽  
Jana Timm ◽  
Maria A. Woodruff ◽  
...  
Keyword(s):  
Thin Film ◽  
Mesoporous Silica ◽  
Silica Nanoparticles ◽  
Mesoporous Silica Nanoparticles ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Gate Electrode ◽  
Conductive Composite ◽  
Highly Porous

A porous and conductive gate electrode of PEDOT:PSS and sulphonated mesoporous silica nanoparticles is investigated for organic thin film transistor sensors.

A novel polysilicon thin-film transistor with a p-n-p structured gate electrode

1996 ◽  
Vol 17 (12) ◽  
pp. 560-562 ◽  
Author(s):  
Byung-Hyuk Min ◽  
Cheol-Min Park ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Gate Electrode
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