Influence of flexoelectric effects on domain switching in ferroelectric films

2021 ◽  
Vol 129 (18) ◽  
pp. 184103
Author(s):  
M. J. Zou ◽  
Y. L. Tang ◽  
Y. P. Feng ◽  
W. R. Geng ◽  
X. L. Ma ◽  
...  
Keyword(s):  
Domain Switching ◽  
Ferroelectric Films

Effect of disorder potential on domain switching behavior in polymer ferroelectric films

2012 ◽  
Vol 24 (1) ◽  
pp. 015706 ◽  
Author(s):  
Pankaj Sharma ◽  
Takashi Nakajima ◽  
Soichiro Okamura ◽  
Alexei Gruverman
Keyword(s):  
Domain Switching ◽  
Switching Behavior ◽  
Ferroelectric Films ◽  
Disorder Potential ◽  
Effect Of Disorder

Dynamic process of domain switching in ferroelectric films

2003 ◽  
Vol 94 (5) ◽  
pp. 3384-3389 ◽  
Author(s):  
Biao Wang ◽  
R. Xia ◽  
H. Fan ◽  
C. H. Woo
Keyword(s):  
Dynamic Process ◽  
Domain Switching ◽  
Ferroelectric Films

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films

Direct Observation of Weakened Interface Clamping Effect Enabled Ferroelastic Domain Switching

2019 ◽  
Author(s):  
Mingqiang Li ◽  
Bo Wang ◽  
Heng-Jui Liu ◽  
Yen-Lin Huang ◽  
Jingmin Zhang ◽  
...  
Keyword(s):  
Direct Observation ◽  
Domain Switching

Ultrafast Photoinduced Strain in Super-Tetragonal PbTiO3 Ferroelectric Films

2020 ◽  
Author(s):  
Linxing Zhang ◽  
Darui Sun ◽  
Maosheng Chai ◽  
Xianran Xing ◽  
Jun Chen ◽  
...  
Keyword(s):  
Ferroelectric Films

Finite element modeling of piezoresponse in nanostructured ferroelectric films

2004 ◽  
Vol 84 (14) ◽  
pp. 2626-2628 ◽  
Author(s):  
J.-H. Li ◽  
L. Chen ◽  
V. Nagarajan ◽  
R. Ramesh ◽  
A. L. Roytburd
Keyword(s):  
Finite Element ◽  
Finite Element Modeling ◽  
Ferroelectric Films ◽  
Element Modeling

scholarly journals Tip-induced domain protrusion in ferroelectric films with in-plane polarization

2021 ◽  
Vol 129 (5) ◽  
pp. 054103
Author(s):  
S. Kondovych ◽  
A. Gruverman ◽  
I. Luk’yanchuk
Keyword(s):  
Ferroelectric Films

scholarly journals Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
T. Janda ◽  
J. Godinho ◽  
T. Ostatnicky ◽  
E. Pfitzner ◽  
G. Ulrich ◽  
...  
Keyword(s):  
Domain Switching
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