Effects of stress on the evolution of Σ-shaped dislocation arrays in a 4H-SiC epitaxial layer

2021 ◽  
Vol 129 (24) ◽  
pp. 245101
Author(s):  
Moonkyong Na ◽  
Wook Bahng ◽  
Hyemin Jang ◽  
Jung Min Kim ◽  
Hyundon Jung
Keyword(s):  
Epitaxial Layer ◽  
Dislocation Arrays ◽  
Effects Of Stress

Etch Selectivity of Novel Epitaxial Layers for Bulk Micromachining

1998 ◽  
Vol 546 ◽  
Author(s):  
J. T. Borenstein ◽  
N. D. Gerrish ◽  
M. T. Currie ◽  
E. A. Fitzgerald
Keyword(s):  
Epitaxial Layer ◽  
Silicon Germanium ◽  
High Performance ◽  
Microstructural Analysis ◽  
Epitaxial Layers ◽  
Silicon Substrates ◽  
High Concentration ◽  
Dislocation Arrays ◽  
High Boron ◽  
Micromechanical Sensors

AbstractThe present work demonstrates very high etch selectivity for a novel epitaxial layer in several standard bulk micromachining etchants. High selectivities have previously been achieved using high-concentration boron diffusions, resulting in a wide array of high performance micromechanical sensors. However, doping gradients, precipitates and dislocation arrays generated from the high boron concentrations can have deleterious effects on device performance. In this work, we report on the performance of a novel epitaxial structure composed of a silicon-germanium alloy device layer over a graded buffer layer. Chemical and microstructural analysis of the epitaxial layers reveal high purity and minimal defect densities. The selectivities of this layer and of boron-diffused layers are determined for a variety of etching conditions. High selectivity against low-doped silicon substrates is demonstrated in both ethylenediamine pyrocatechol and potassium hydroxide. Micromachined structures built using the SiGe epitaxial layer show smooth surfaces and precise build dimensions.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

Effects of Stress on Suggestibility to Misinformation

2007 ◽  
Author(s):  
Mine Misirlisoy ◽  
Katinka Dijkstra
Keyword(s):  
Effects Of Stress
Sign in / Sign up

Export Citation Format

Share Document