Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN

2021 ◽  
Vol 129 (19) ◽  
pp. 195303
Author(s):  
Atsushi Hiraiwa ◽  
Kiyotaka Horikawa ◽  
Hiroshi Kawarada
2020 ◽  
Vol 142 ◽  
pp. 109462 ◽  
Author(s):  
S. Karmakar ◽  
B. Raviteja ◽  
Chetan D. Mistari ◽  
Vanshree Parey ◽  
Ranjit Thapa ◽  
...  

Open Physics ◽  
2004 ◽  
Vol 2 (1) ◽  
Author(s):  
J. Aarik ◽  
V. Bichevin ◽  
I. Jõgi ◽  
H. Käämbre ◽  
M. Laan ◽  
...  

AbstractI-V-characteristics have been measured for Au−TiO2−Ag structures with TiO2 layers of 30 and 180 nm thickness. The TiO2 films were grown by atomic layer deposition (ALD) technique. In the case of negative bias on the Au electrode, the conduction currents through TiO2 layers follow the Fowler-Nordheim formula for field emission over several orders of magnitude. The bulk of the currents may be attributed to tunnelling, seemingly through a Schottky barrier at the Au−TiO2 junction. In the case of reversed polarity the currents are also observed, but cannot be interpreted as tunnelling.


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