scholarly journals High-performance complementary resistive switching in ferroelectric film

AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065202
Author(s):  
Pan Zhang ◽  
Wenjing Zhai ◽  
Zhibo Yan ◽  
Xiang Li ◽  
Yongqiang Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Ferroelectric Film

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

scholarly journals High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1081
Author(s):  
Shin-Yi Min ◽  
Won-Ju Cho
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Electric Pulse ◽  
Chemical Species ◽  
Optical Absorption Coefficient ◽  
Microwave Assisted ◽  
Synthesis Strategy ◽  
Metal Insulator Metal ◽  
Switching Characteristics

In this study, we implemented a high-performance two-terminal memristor device with a metal/insulator/metal (MIM) structure using a solution-derived In-Ga-Zn-Oxide (IGZO)-based nanocomposite as a resistive switching (RS) layer. In order to secure stable memristive switching characteristics, IGZO:N nanocomposites were synthesized through the microwave-assisted nitridation of solution-derived IGZO thin films, and the resulting improvement in synaptic characteristics was systematically evaluated. The microwave-assisted nitridation of solution-derived IGZO films was clearly demonstrated by chemical etching, optical absorption coefficient analysis, and X-ray photoelectron spectroscopy. Two types of memristor devices were prepared using an IGZO or an IGZO:N nanocomposite film as an RS layer. As a result, the IGZO:N memristors showed excellent endurance and resistance distribution in the 103 repeated cycling tests, while the IGZO memristors showed poor characteristics. Furthermore, in terms of electrical synaptic operation, the IGZO:N memristors possessed a highly stable nonvolatile multi-level resistance controllability and yielded better electric pulse-induced conductance modulation in 5 × 102 stimulation pulses. These findings demonstrate that the microwave annealing process is an effective synthesis strategy for the incorporation of chemical species into the nanocomposite framework, and that the microwave-assisted nitridation improves the memristive switching characteristics in the oxide-based RS layer.

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

2021 ◽  
Author(s):  
Yifei Yang ◽  
Mingkun Xu ◽  
Lujie Xu ◽  
Xinxin Wang ◽  
Huan Liu ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Performance ◽  
Visual Recognition ◽  
Stimulus Frequency ◽  
Dielectric Materials ◽  
Cross Point ◽  
Electrochemically Active ◽  
Event Based

Abstract The electrochemical (EC) resistive switching (RS) cross-point arrays, composed of nonvolatile RS (NV-RS) memories and volatile RS (V-RS) selectors, hold promise for high-density data storage, in-memory computing and neuromorphic computing. However, the conventional EC-RS devices based on metallic filaments suffer from the notorious current-volatility dilemma that the low and high current requirements for NV-RS memories and V-RS selectors, respectively, cannot be satisfied simultaneously, due to the dominant EC nature of the RS. In this work, we demonstrate electrochemically active, low thermal-conductivity and low melting-temperature semiconducting tellurium filament-based RS devices that solve this dilemma, enabling NV-RS memories to operate under lower currents than do V-RS selectors. This novel phenomenon arises as the consequence of the adversarial EC and Joule heating (JH) effects. The devices also show unusual stimulus frequency dependent long-term plasticity (LTP)-to-short-term plasticity (STP) transition. Devices with this property can be generically utilized as spatial-temporal filters in spiking neural networks (SNNs) for high-performance event-based visual recognition tasks, as illustrated in our noise filtering simulations. By regulating the EC-JH relationship using dielectric materials with decreasing thermal conductivities, full functional-range tunable Te filament-based devices, from always-NV RS, to NV-to-V transitionable RS, and to always-V RS, are also demonstrated. The tellurium filament-based RS devices are promising enablers for functional cross-point arrays.

Bottom Electrode Nanoasperities as a Root of High Performance Resistive Switching Effect

2020 ◽  
Author(s):  
Dmitry S. Kuzmichev ◽  
Anastasia A. Chouprik ◽  
Aleksandr S. Slavich ◽  
Roman V. Kirtaev ◽  
Dmitry V. Negrov
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Bottom Electrode ◽  
Switching Effect ◽  
Resistive Switching Effect

Multilevel characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

Abstract TiOx-bsed resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95 % in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

Sign in / Sign up

Export Citation Format

Share Document