scholarly journals Erratum: “Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode” [AIP Adv. 8, 115011 (2018)]

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 029901
Author(s):  
Kazuki Isobe ◽  
Masamichi Akazawa
Keyword(s):  
Surface Treatment ◽  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diode ◽  
Metal Work Function ◽  
Metal Work

Dependence of Schottky Barrier Height on Metal Work Function

2011 ◽  
Author(s):  
Shammi Verma ◽  
D. Kabiraj ◽  
T. Kumar ◽  
Sandeep Kumar ◽  
D. Kanjilal ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Metal Work Function ◽  
Metal Work

scholarly journals Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 319-327 ◽  
Author(s):  
Jenifer R. Hajzus ◽  
Adam J. Biacchi ◽  
Son T. Le ◽  
Curt A. Richter ◽  
Angela R. Hight Walker ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Individual Solution ◽  
Specific Contact ◽  
Metal Work

Four different metals were patterned onto individual, solution-synthesized SnS nanoribbons to determine Schottky barrier heights and specific contact resistances.

Metal / Hydrogenated Amorphous Silicon Interfaces

1987 ◽  
Vol 95 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Metal Work Function ◽  
Consistent Model ◽  
Current Saturation ◽  
Metal Work ◽  
Hydrogenated Amorphous

The contact properties between different metals and hydrogenated amorphous silicon, prepared by various deposition techniques in different laboratories, are reviewed. From these studies the appropriate metallizations have been established for the achievement of Schottky diode, quasi-ohmic or ohmic contact to undoped and doped films. The various characteristic parameters describing Schottky barrier interfaces such as ideality factor, current saturation, contact resistance and barrier height are discussed. The dependence of Schottky barrier height upon the metal work function, measuring and annealing temperature, and optical band-gap are also reported. The minority-carrier injection and series resistance effects on the contact properties of a-Si:H diodes are described. All the results are interpreted in terms of a self-consistent model that exhibits an electrode-limited to bulk-limited transition.

Interface States and Barrier Heights on Metal/4H-SiC Interfaces

2009 ◽  
Vol 615-617 ◽  
pp. 427-430 ◽  
Author(s):  
Shaweta Khanna ◽  
Arti Noor ◽  
Man Singh Tyagi ◽  
Sonnathi Neeleshwar
Keyword(s):  
Work Function ◽  
Barrier Height ◽  
Surface Preparation ◽  
Interface States ◽  
Careful Examination ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Wide Range ◽  
Metal Work ◽  
Density Of Interface States

Available data on Schottky barrier heights on silicon and carbon rich faces of 4H-SiC have been carefully analyzed to investigate the mechanism of barrier formation on these surfaces. As in case of 3C and 6H-SiC, the barrier heights depend strongly upon method of surface preparation with a considerable scatter in the barrier height for a given metal-semiconductor system. However, for each metal the barrier height depends on the metal work function and strong pinning of the Fermi level has not been observed. The slopes of the linear relation between the barrier heights and metal work functions varies over a wide range from 0.2 to about 0.75 indicating that the density of interface states depends strongly on the method of surface preparation. By a careful examination of the data on barrier heights we could identify a set of nearly ideal interfaces in which the barrier heights vary linearly with metal work function approaching almost to the Schottky limit. The density of interface states for these interfaces is estimated to lie between 4.671012 to 2.631012 states/ cm2 eV on the silicon rich surface and about three times higher on the carbon rich faces. We also observed that on these ideal interfaces the density of interface states was almost independent of metal indicating that the metal induced gap states (MIGS) play no role in determining the barrier heights in metal-4H-SiC Schottky barriers.

scholarly journals Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC

2012 ◽  
Vol 7 (1) ◽  
pp. 75 ◽  
Author(s):  
Min-Seok Kang ◽  
Jung-Joon Ahn ◽  
Kyoung-Sook Moon ◽  
Sang-Mo Koo
Keyword(s):  
Work Function ◽  
Barrier Height ◽  
Metal Work Function ◽  
Embedded Nanoparticles ◽  
Metal Work
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