scholarly journals Ultra-low supply voltage crystal quartz oscillator

2021 ◽  
Vol 92 (5) ◽  
pp. 054706
Author(s):  
A. M. Korolev ◽  
V. M. Shulga ◽  
O. G. Turutanov
Keyword(s):  
Supply Voltage ◽  
Quartz Oscillator ◽  
Crystal Quartz ◽  
Low Supply Voltage

A new erasing and row decoding scheme for low supply voltage operation 16-Mb/64-Mb flash memories

1992 ◽  
Vol 27 (4) ◽  
pp. 583-588 ◽  
Author(s):  
Y. Miyawaki ◽  
T. Nakayama ◽  
S. Kobayashi ◽  
N. Ajika ◽  
M. Ohi ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Flash Memories ◽  
Low Supply Voltage

A 12-BIT 400-MS/s CURRENT-STEERING DAC WITH DEGLITCHING TECHNIQUE

2014 ◽  
Vol 23 (01) ◽  
pp. 1450004 ◽  
Author(s):  
XIAOBO XUE ◽  
XIAOLEI ZHU ◽  
QIFENG SHI ◽  
LENIAN HE
Keyword(s):  
Dynamic Range ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Signal Frequency ◽  
Current Steering ◽  
Digital To Analog Converter ◽  
Measurement Results ◽  
Voltage Swing ◽  
Current Steering Dac ◽  
Low Supply Voltage

In this paper, a 12-bit current-steering digital-to-analog converter (DAC) employing a deglitching technique is proposed. The deglitching technique is realized by lowering the voltage swing of the control signal as well as by using a method of glitch counteraction (GC). A new switch–driver structure is designed to enable the effectiveness of the GC and provide sufficient driving capability under a low supply voltage. Moreover, the control signal's rise/fall asymmetry which increases the glitch error can be suppressed by using the proposed switch–driver structure. The 12-bit DAC is implemented in 180 nm CMOS technology. The measurement results show that the spurious free dynamic range (SFDR) at low signal frequency is 78.8 dB, and it is higher than 70 dB up to 60 MHz signal frequency at 400 MS/s. The measured INL and DNL are both less than ±0.6 LSB.

scholarly journals DVCC-based Low-power RF Filter with 32 nm CNFETs

2021 ◽  
Author(s):  
Shailendra Tripathi ◽  
Amit Mahesh Joshi
Keyword(s):  
Low Power ◽  
Analog Circuits ◽  
Satellite Communication ◽  
Supply Voltage ◽  
Wide Band ◽  
Rf Receiver ◽  
Rf Filter ◽  
Low Supply Voltage ◽  
Differential Voltage Current Conveyor ◽  
Carbon Nanotube Fet

Abstract This work presents a wide-band active filter for RF receiver. The design uses Carbon Nanotube-FET (CNFET) based differential voltage current conveyor (DVCC) for the implementation of the proposed filter. The filter is designed to operate Ku-band frequencies (12-18 GHz), which is used in satellite communication. Additionally, CMOS based circuit and CNFET-based circuit for DVCC are compared for the performance evaluation. HSPICE simulations have been carried out to test the design aspects of the circuit. The CNFET-based circuit has better results in terms of 60 % reduction in the power consumption and about six times improvement in the bandwidth. The filter utilizes low supply voltage of 0.9 V and consumes 524 µW only. The proposed filter outperforms the existing CMOS-based designs which suggests its usage for low-power high-frequency analog circuits.

Passive Components for RF-ICs

2012 ◽  
pp. 189-214
Author(s):  
Gianluca Cornetta ◽  
David J. Santos ◽  
José Manuel Vázquez
Keyword(s):  
Integrated Circuits ◽  
Quality Factor ◽  
Silicon Substrate ◽  
Supply Voltage ◽  
Magnetic Behavior ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Fully Integrated ◽  
Core Elements ◽  
Low Supply Voltage

The modern wireless communication industry is demanding transceivers with a high integration level operating in the gigahertz frequency range. This, in turn, has prompted intense research in the area of monolithic passive devices. Modern fabrication processes now provide the capability to integrate onto a silicon substrate inductors and capacitors, enabling a broad range of new applications. Inductors and capacitors are the core elements of many circuits, including low-noise amplifiers, power amplifiers, baluns, mixers, and oscillators, as well as fully-integrated matching networks. While the behavior and the modeling of integrated capacitors are well understood, the design of an integrated inductor is still a challenging task since its magnetic behavior is hard to predict accurately. As the operating frequency approaches the gigahertz range, device nonlinearities, coupling effects, and skin effect dominate, making difficult the design of critical parameters such as the self-resonant frequency, the quality factor, and self and mutual inductances. However, despite the parasitic effects and the low quality-factor, integrated inductors still allow for the implementation of integrated circuits with improved performances under low supply voltage. In this chapter, the authors review the technology behind monolithic capacitors and inductors on silicon substrate for high-frequency applications, with major emphasis on physical implementation and modeling.

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