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Maciej Matys ◽  
Takashi Ishida ◽  
Kyung Pil Nam ◽  
Hideki Sakurai ◽  
Tetsuo Narita ◽  
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Power Device ◽  
Edge Termination ◽  
Device Applications ◽  
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Srabanti Chowdhury ◽  
Brendan Gunning ◽  
Robert Kaplar ◽  
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Edge Termination ◽  
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High hole mobility in boron doped diamond for power device applications

2009 ◽  
Vol 94 (9) ◽  
pp. 092102 ◽  
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Pierre-Nicolas Volpe ◽  
Julien Pernot ◽  
Pierre Muret ◽  
Franck Omnès
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Hole Mobility ◽  
Power Device ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
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A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

2003 ◽  
Vol 216 (1-4) ◽  
pp. 483-489 ◽  
Author(s):  
Yoko Yokoyama ◽  
Xueqing Li ◽  
Kuang Sheng ◽  
Andrei Mihaila ◽  
Tanija Traikovic ◽  
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Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cvd Diamond ◽  
Power Device ◽  
Nitrogen Doped ◽  
Device Applications ◽  
Effect Transistor

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

2019 ◽  
Vol 66 (8) ◽  
pp. 3441-3446 ◽  
Author(s):  
Chia-Hsun Wu ◽  
Jian-You Chen ◽  
Ping-Cheng Han ◽  
Ming-Wen Lee ◽  
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Power Device ◽  
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Direct Bonding of GaAs and Diamond for High Power Device Applications

2020 ◽  
Vol MA2020-02 (22) ◽  
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Yuji Nakamura ◽  
Yutaka Ohno ◽  
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High Power ◽  
Power Device ◽  
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Microbial fuel cells as a sustainable platform technology for bioenergy, biosensing, environmental monitoring, and other low power device applications

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Vol 255 ◽  
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Vivek Kumar ◽  
Ritesh Kumar ◽  
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Fuel Cells ◽  
Low Power ◽  
Environmental Monitoring ◽  
Microbial Fuel Cells ◽  
Power Device ◽  
Platform Technology ◽  
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Fabrication of diamond/Cu direct bonding interface for power device applications

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Vol 59 (SB) ◽  
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Author(s):  
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Yasuo Shimizu ◽  
Yutaka Ohno ◽  
Kenji Shirasaki ◽  
Yasuyoshi Nagai ◽  
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Power Device ◽  
Device Applications

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Keiko Masumoto ◽  
Hirokuni Asamizu ◽  
Shinsuke Harada ◽  
Hajime Okumura
Keyword(s):  
Power Device ◽  
Device Applications
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