scholarly journals Influence of substrate-induced thermal stress on the superconducting properties of V 3 Si thin films

2021 ◽  
Vol 129 (10) ◽  
pp. 105104
Author(s):  
T. D. Vethaak ◽  
F. Gustavo ◽  
T. Farjot ◽  
T. Kubart ◽  
P. Gergaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stress ◽  
Superconducting Properties ◽  
Influence Of Substrate

SUPERCONDUCTING PROPERTIES OF IRIDIUM THIN FILMS

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-608-C6-609
Author(s):  
L. B. Holdeman ◽  
R. J. Soulen ◽  
Jr ◽  
T. F. Finnegan ◽  
P. N. Peters
Keyword(s):  
Thin Films ◽  
Superconducting Properties

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

scholarly journals Influence of Substrate Materials on Nucleation and Properties of Iridium Thin Films Grown by ALD

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 173
Author(s):  
Paul Schmitt ◽  
Vivek Beladiya ◽  
Nadja Felde ◽  
Pallabi Paul ◽  
Felix Otto ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Bulk Material ◽  
Atomic Layer ◽  
Substrate Material ◽  
Fused Silica ◽  
Silicon Wafers ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Influence Of Substrate

Ultra-thin metallic films are widely applied in optics and microelectronics. However, their properties differ significantly from the bulk material and depend on the substrate material. The nucleation, film growth, and layer properties of atomic layer deposited (ALD) iridium thin films are evaluated on silicon wafers, BK7, fused silica, SiO2, TiO2, Ta2O5, Al2O3, HfO2, Ru, Cr, Mo, and graphite to understand the influence of various substrate materials. This comprehensive study was carried out using scanning electron and atomic force microscopy, X-ray reflectivity and diffraction, four-point probe resistivity and contact angle measurements, tape tests, and Auger electron spectroscopy. Within few ALD cycles, iridium islands occur on all substrates. Nevertheless, their size, shape, and distribution depend on the substrate. Ultra-thin (almost) closed Ir layers grow on a Ta2O5 seed layer after 100 cycles corresponding to about 5 nm film thickness. In contrast, the growth on Al2O3 and HfO2 is strongly inhibited. The iridium growth on silicon wafers is overall linear. On BK7, fused silica, SiO2, TiO2, Ta2O5, Ru, Cr, and graphite, three different growth regimes are distinguishable. The surface free energy of the substrates correlates with their iridium nucleation delay. Our work, therefore, demonstrates that substrates can significantly tailor the properties of ultra-thin films.

scholarly journals Strain-stabilized superconductivity

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
J. P. Ruf ◽  
H. Paik ◽  
N. J. Schreiber ◽  
H. P. Nair ◽  
L. Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Materials Science ◽  
Condensed Matter ◽  
Quantum States ◽  
Low Energy ◽  
Superconducting Transition ◽  
Superconducting Properties ◽  
Detailed Understanding ◽  
Epitaxial Strain ◽  
Promising Strategy

AbstractSuperconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO2 thin films on (110)-oriented TiO2 substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.

Formation of Fe 2 SiO 4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

2018 ◽  
Vol 532 ◽  
pp. 80-83 ◽  
Author(s):  
Jeongyong Choi ◽  
Van Quang Nguyen ◽  
Van Thiet Duong ◽  
Yooleemi Shin ◽  
Anh Tuan Duong ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Thermoelectric Transport ◽  
Si Substrates ◽  
Thermoelectric Transport Properties ◽  
Influence Of Substrate
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