scholarly journals Vertical silicon etching by using an automatically and fast-controlled frequency tunable rf plasma source

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025013
Author(s):  
Kengo Hanaoka ◽  
Kazunori Takahashi
Keyword(s):  
Plasma Source ◽  
Rf Plasma ◽  
Silicon Etching ◽  
Frequency Tunable

scholarly journals RF Plasma source for a Heavy Ion Fusion injector

2005 ◽  
Vol 544 (1-2) ◽  
pp. 436-440 ◽  
Author(s):  
G.A. Westenskow ◽  
D.P. Grote ◽  
E. Halaxa ◽  
J.W. Kwan ◽  
W.L. Waldron
Keyword(s):  
Plasma Source ◽  
Heavy Ion ◽  
Rf Plasma ◽  
Heavy Ion Fusion

Mechanical and Chemical Properties of CBxNy and CSixNy Thin Films Grown by N*-Plasma Assisted Pulsed Laser Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
T. Thärigen ◽  
V. Riede ◽  
G. Lippold ◽  
E. Hartmann ◽  
R. Hesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Properties ◽  
Plasma Source ◽  
Laser Deposition ◽  
Lower Amount ◽  
Rf Plasma ◽  
Clear Correlation

ABSTRACTCarbon silicon nitride (CSixNy), and carbon boron nitride (CBxNy) thin films have been grown by pulsed laser deposition (PLD) of various carbon (silicon/boron) (nitride) targets using an additional nitrogen RF plasma source on [100] oriented silicon substrates without additional heating. The CSixNy and CBxNy thin films were amorphous and showed nano hardness up to 23 GPa compared to 14 GPa for silicon and maximum nitrogen content of 30 at%. The maximum nanohardness was achieved for 10% Si and 10% B content in the films. The lower hardness of this films compared to the nanohardness of 30-50 GPa of DLC films indicates a lower amount of covalent carbon-nitrogen bonding in the films. However, in contrast to DLC films, the CSixNy and CBxNy films can be grown to thickness above 3 μm due to lower internal compressive stress. XPS of CSixNy and CBxNy film surfaces shows clear correlation of binding energy and intensity of N ls, C ls, and Si 2p peaks to composition of the PLD-targets and to nitrogen flow through plasma source, indicating soft changes of binding structure due to variation of PLD parameters. The results demonstrate the capability of the plasma assisted PLD process to deposit hard amorphous CSixNy, and CBxNy thin films with adjustable properties.

GaAs/c-GaN/GaAs multi-layered structure fabricated by using RF-plasma source nitridation technique

2007 ◽  
Vol 4 (7) ◽  
pp. 2326-2329 ◽  
Author(s):  
Y. Yamamoto ◽  
M. Mori ◽  
H. Otsubo ◽  
T. Maruyama ◽  
S. Naritsuka
Keyword(s):  
Layered Structure ◽  
Plasma Source ◽  
Rf Plasma

High throughput PIAD with an advanced RF-plasma source and direct optical monitoring

2016 ◽  
Author(s):  
Alfons Zöller ◽  
Detlef Arhilger ◽  
Michael Boos ◽  
Harro Hagedorn ◽  
Holger Reus
Keyword(s):  
High Throughput ◽  
Plasma Source ◽  
Rf Plasma ◽  
Optical Monitoring

Relating Surface Structure and Growth Mode of γ′Fe4N

2003 ◽  
Vol 10 (02n03) ◽  
pp. 405-411 ◽  
Author(s):  
D. O. Boerma ◽  
S. Y. Grachev ◽  
D. M. Borsa ◽  
R. Miranda ◽  
J. M. Gallego
Keyword(s):  
Growth Mechanism ◽  
Plasma Source ◽  
Thin Layers ◽  
Scanning Tunneling ◽  
Rf Plasma ◽  
Nitride Phase ◽  
Tunneling Microscopy ◽  
Metallic Conductor ◽  
Device Applications ◽  
Step Flow Growth

We have grown thin layers of γ′Fe4N on Cu(100) substrates by molecular beam epitaxy in a flow of atomic nitrogen, delivered by a radio-frequency (RF) plasma source. This nitride phase is a ferromagnetic metallic conductor and has interesting properties for device applications. In addition it has an intriguing growth mechanism. In earlier work we found that pure crystalline layers can be grown at substrate temperatures higher than 250°C, with excess nitrogen and in the presence of hydrogen.1 To gain insight into the growth mechanism, we studied the structure and composition with scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), low-energy electron diffraction (LEED) and X-ray diffraction (XRD). This was done for a coverage range of Fe4N on Cu(100) between 0.5 and 30 monolayers (ML) equivalent of Fe, deposited at 400°C, or at 300°C in one case. Here a preliminary account of this study is presented. We found that at sub-ML coverage, first "depressed" (with respect to the Cu surface) islands of Fe–N are formed. Then, on top of these islands a second layer is growing. Subsequently the space between the islands is filled up by a Fe–N layer growing directly on Cu. This gives rise to a smooth surface with patches differing in height by only 0.5 Å. The following layers grow by step-flow growth. The smooth terraces still show patches with a 0.5 Å height difference. The phase is γ′Fe4N with a distorted (p4g-like) structure as observed with LEED and STM, where a p(2 × 2) symmetry is seen. The c(2 × 2) symmetry expected for γ′Fe4N is observed after growing 30 ML or more. A model for the growth mechanism based on our observations is proposed.

Growth of AlN and TiN Structures by Plasma-Enhanced Pulsed Laser Deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Edward Poindexter ◽  
Yan Xin ◽  
Steven M. Durbin
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Plasma Source ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
High Energy ◽  
Film Deposition ◽  
Rf Plasma ◽  
Nitrogen Species ◽  
Active Nitrogen

AbstractNitride materials are of interest for a wide variety of applications, including wear-resistant coatings, insulating layers, high-temperature semiconductor devices, and short-wavelength emitters and detectors. TiN and AlN appear to be particularly amenable to crystalline thin film deposition, with stoichiometric material easily obtained even without the use of active nitrogen species. This paper describes the growth of crystalline AlN and TiN thin films on silicon and sapphire substrates using a KrF excimer laser (λ = 248 nm) to ablate elemental metallic targets, and an inductively-coupled RF plasma source to supply active nitrogen species. Growth was monitored in-situ using reflection high-energy electron diffraction (RHEED), and films were characterised using fourier-transform infrared spectroscopy (FTIR) and electron microscopy techniques. Optimised growth conditions led to single-crystal growth of TiN on both substrates, but only polycrystalline AlN was formed directly. Use of a TiN buffer layer on (0001) sapphire led to the successful growth of a single-crystal AlN layer as confirmed by RHEED and high-resolution transmission electron microscopy (HRTEM).

High efficiency RF-plasma source with increased energy range

2015 ◽  
Author(s):  
D. Arhilger ◽  
H. Hagedorn ◽  
H. Reus ◽  
A. Zöller
Keyword(s):  
Energy Range ◽  
High Efficiency ◽  
Plasma Source ◽  
Rf Plasma

Preparation of Stable F-Doped SiO2Thin Films from Si(NCO)4/SiF4/O2Gas Mixtures Using a Conventional Capacitively Coupled RF Plasma Source

1997 ◽  
Vol 36 (Part 1, No. 7B) ◽  
pp. 4911-4916 ◽  
Author(s):  
Mahito Sawada ◽  
Yuko Nakagami ◽  
Tatsuru Shirafuji ◽  
Yasuaki Hayashi ◽  
Shigehiro Nishino
Keyword(s):  
Plasma Source ◽  
Rf Plasma ◽  
Capacitively Coupled
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