Strain-controlled electrical and magnetic properties of SrRuO3 thin films with Sr3Al2O6 buffer layers

2021 ◽  
Vol 118 (7) ◽  
pp. 072407
Author(s):  
Chuan-Zhu Hu ◽  
You-Shan Zhang ◽  
Xu Niu ◽  
Ni Zhong ◽  
Ping-Hua Xiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Buffer Layers ◽  
Electrical And Magnetic Properties

Structure, Electrical and Magnetic Properties of Thin Films of La1−xMxMnO3 on Si

1999 ◽  
Vol 562 ◽  
Author(s):  
N. N. Mateeva ◽  
P. C. Hogan ◽  
K. H. Dahmen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Transition Temperature ◽  
Buffer Layers ◽  
Ferromagnetic Transition ◽  
Electrical And Magnetic Properties ◽  
Insulator Metal Transition ◽  
Composition Structure

ABSTRACTThin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Percolation Effects in the Mechanical Properties of Granular Ni-A12O3 thin films

1990 ◽  
Vol 195 ◽  
Author(s):  
T.E. Schlesinger ◽  
A. Gavrin ◽  
R.C. Cammarata ◽  
C.-L. Chien
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Plastic Deformation ◽  
Magnetic Properties ◽  
Percolation Threshold ◽  
Volume Fraction ◽  
Electrical And Magnetic Properties ◽  
Low Load

ABSTRACTThe mechanical properties of sputtered Ni-Al2O3 granular thin films were investigated by low load microharaness testing. It was found that the microhardness of these films displayed a percolation threshold at a nickel volume fraction of about 0.6, below which the hardness is greatly enhanced. This behavior is qualitatively similar to the electrical and magnetic properties of these types of films. A percolation threshold in hardness can be understood as due to a change in the mechanism for plastic deformation.

Ferro-electric and magnetic properties in Bi5Ti3FeO15 films by Mn-doping

2021 ◽  
Author(s):  
Xue Zhang ◽  
Ruijuan Qi ◽  
Shangwei Dong ◽  
Shuai Yang ◽  
Xuekun Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Cell Volume ◽  
Unit Cell Volume ◽  
Unit Cell ◽  
Mn Doping ◽  
Electrical And Magnetic Properties ◽  
Mn Doped

We investigate the structure and optical, electrical and magnetic properties in Mn-doped Bi5Ti3FeO15 (BTFO) thin films. While Mn-doping does not almost change the structure and unit cell volume of BTFO,...

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