scholarly journals Determination of the energetic resolution of Schottky barrier visualization via interface band structure and parallel momentum conservation

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025108
Author(s):  
Jack Rogers ◽  
Westly Nolting ◽  
Chris Durcan ◽  
Robert Balsano ◽  
Vincent P. LaBella
Keyword(s):  
Band Structure ◽  
Schottky Barrier ◽  
Momentum Conservation ◽  
Parallel Momentum

Study of PtSi/Si(100) Interfaces by Ballistic -Electronemission Microscopy

1993 ◽  
Vol 320 ◽  
Author(s):  
Bruce R. Turner ◽  
L. J. Schowalter ◽  
E. Y. Lee ◽  
J. R. Jimenez
Keyword(s):  
Band Structure ◽  
Schottky Barrier ◽  
Mean Free Path ◽  
Momentum Conservation ◽  
Hot Electron ◽  
Attenuation Length ◽  
Electron Model ◽  
Semiconductor Interface ◽  
Turn On ◽  
Good Spatial Resolution

ABSTRACTThe PtSi/Si interface is of technological interest for Schottky barrier infrared detectors. We are studying PtSi/Si heterostructures using ballistic -electron-emission microscopy (BEEM), an STM-based technique that uses the STM tip to inject hot electrons at a particular energy into the metal overlayer. The BEEM technique allows imaging of the Schottky barrier with good spatial resolution (of the order of tens of nanometers) and allows the measurement of the hot electron attenuation length in the metal overlayer. Our results indicate a Schottky barrier of 0.87 eV for PtSi/Si n-type, and an attenuation length of 4 nm for electrons with an energy of 1 eV above the metal Fermi level. The attenuation length we measure is a convolution of the electron elastic and inelastic mean free path lengths.We have also used an ac BEEM technique to observe inelastic scattering events at the metalsemiconductor interface in PtSi/Si(100) n-type. There are several features visible in the spectrum, including one at 1040 meV which we attribute to optical phonon-assisted electron-hole pair creation near the metal- semiconductor interface in analogy to a feature we have observed at the same energy in the Au/Si(100) ac BEEM spectrum. Higher-energy features appear at 1230 meV and 1300 meV. Similar features appeared in the Au/Si(100) spectrum at 1120 meV and 1230 meV.We also suggest that the traditional assumption of momentum conservation parallel to the Schottky barrier interface is unnecessary to obtain a quadratic turn on of the BEEM current above the threshold. If electrons are elastically scattered at the interface so that momentum is not conserved, the increase in the ratio of the density of states in the semiconductor to those in the metal will also give a quadratic turn on even when the band structure is much more complicated than a nearly free electron model. This model also explains why the simple square-root dependence of the photoresponse on wavelength above threshold observed in all metal/semiconductor Schottky barriers despite the complications in band structure.

scholarly journals New cosmological solutions in hybrid metric-Palatini gravity from dynamical symmetries

2021 ◽  
pp. 2150100
Author(s):  
Andronikos Paliathanasis
Keyword(s):  
Conservation Laws ◽  
Integrable Systems ◽  
Functional Form ◽  
Analytic Solutions ◽  
Momentum Conservation ◽  
Field Equations ◽  
Dynamical Symmetries ◽  
Cosmological Solutions ◽  
Liouville Integrable

We investigate the existence of Liouville integrable cosmological models in hybrid metric-Palatini theory. Specifically, we use the symmetry conditions for the existence of quadratic in the momentum conservation laws for the field equations as constraint conditions for the determination of the unknown functional form of the theory. The exact and analytic solutions of the integrable systems found in this study are presented in terms of quadratics and Laurent expansions.

scholarly journals Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width

2020 ◽  
Author(s):  
Ezekiel Omotoso ◽  
Alexander Tapera Paradzah ◽  
Emmanuel Igumbor ◽  
Bidini A Taleatu ◽  
Walter E Meyer ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Pulse Width ◽  
Schottky Barrier Diodes ◽  
Barrier Energy

Spin Coating Planarization Of Integrated Circuit Topography On A Rotating Disk

1991 ◽  
Vol 227 ◽  
Author(s):  
Roger K. Yonkoski ◽  
David S. Soane
Keyword(s):  
Experimental Data ◽  
Fluid Flow ◽  
Integrated Circuit ◽  
Spin Coating ◽  
Rotating Disk ◽  
Momentum Conservation ◽  
Flat Surfaces ◽  
Determination Of Parameters ◽  
Polyimide Precursor

ABSTRACTPolyimide is commonly used in the microelectronic industry for interconnection applications because of its ability to planarize features typically found on an IC chip. A mathematical model is developed to describe fluid flow on a rotating disk based on the principles of mass and momentum conservation. Constitutive relationships necessary for this model are proposed. Experimental data for polyimide precursor solutions are presented which enable the determination of parameters for the constitutive equations. This model is used to describe the film profiles over flat surfaces and near micron-sized features. Attention is focused on the coupling between mass transport and fluid flow as well as the effects of surface tension on film profiles over topographical features.

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