scholarly journals Design and characterization of a resonant microwave cavity as a diagnostic for ultracold plasmas

2021 ◽  
Vol 92 (1) ◽  
pp. 013506
Author(s):  
M. A. W. van Ninhuijs ◽  
K. A. Daamen ◽  
J. Beckers ◽  
O. J. Luiten
2020 ◽  
Vol 128 (7) ◽  
pp. 073904
Author(s):  
Jeremy Bourhill ◽  
Vincent Castel ◽  
Alexandre Manchec ◽  
Gwendal Cochet

2006 ◽  
Vol 527-529 ◽  
pp. 733-736
Author(s):  
Timothy Bogart ◽  
W.J. Everson ◽  
Rick D. Gamble ◽  
Ed Oslosky ◽  
David Snyder ◽  
...  

Semi-insulating silicon carbide (SiC) wafers are important as substrates for high frequency devices such as AlGaN-GaN HEMT’s. A nondestructive characterization technique has been developed to measure the dielectric properties of SiC wafers in the GHz frequency range where the devices will operate in order to validate wafers for high yield working devices. The dielectric loss is measured at approximately 16 GHz in a split microwave cavity. Initial results show a correlation where the dielectric loss decreases as the resistivity increases, where the resistivity was measured using a Contactless Resistivity Mapping system (COREMA). The uniformity of dielectric loss across SiC wafers was evaluated using a split post dielectric resonator cavity fixed at 5.5GHz to measure the dielectric loss at five points on a wafer. Dielectric loss as a function of temperature from room temperature to 400°C was also studied.


2018 ◽  
Vol 9 (34) ◽  
pp. 6975-6980 ◽  
Author(s):  
Yuqiang Yan ◽  
Sergio Gonzalez-Cortes ◽  
Benzhen Yao ◽  
Daniel R. Slocombe ◽  
Adrian Porch ◽  
...  

Here we report an entirely new method for the non-intrusive interrogation and characterisation of emulsions based on the microwave cavity perturbation technique.


Author(s):  
M. Cabanes-Sempere ◽  
C. Cozzo ◽  
J.M. Catala-Civera ◽  
F.L. Penaranda-Foix ◽  
K. Ishizaki ◽  
...  

2019 ◽  
Vol 100 (6) ◽  
Author(s):  
M. A. W. van Ninhuijs ◽  
K. A. Daamen ◽  
J. G. H. Franssen ◽  
J. Conway ◽  
B. Platier ◽  
...  

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