Recent progress on the development of Li-8 radioactive ion beam based on 100-MeV proton linear accelerator at KOMAC

2021 ◽  
Author(s):  
Pilsoo Lee ◽  
Jeong-Jeung Dang ◽  
Won-Hyeok Jung ◽  
Dong-Hwan Kim ◽  
Hyeok-Jung Kwon ◽  
...  
Keyword(s):  
Linear Accelerator ◽  
Recent Progress ◽  
Ion Beam ◽  
Radioactive Ion Beam ◽  
Proton Linear Accelerator

A SINGLE STAGE ECR SOURCE FOR THE RADIOACTIVE ION BEAM PROJECT IN LOUVAIN-LA-NEUVE

1989 ◽  
Vol 50 (C1) ◽  
pp. C1-813-C1-817
Author(s):  
M. ARNOULD ◽  
F. BAETEN ◽  
D. DARQUENNES ◽  
Th. DELBAR ◽  
C. DOM ◽  
...  
Keyword(s):  
Ion Beam ◽  
Single Stage ◽  
Radioactive Ion Beam ◽  
Ecr Source

Scientific program of DERICA — prospective accelerator and storage ring facility for radioactive ion beam research

2018 ◽  
Vol 189 (07) ◽  
pp. 721-738
Author(s):  
Leonid V. Grigorenko ◽  
Boris Yu. Sharkov ◽  
Andrei S. Fomichev ◽  
Aleksei L. Barabanov ◽  
V. Bart ◽  
...  
Keyword(s):  
Storage Ring ◽  
Ion Beam ◽  
Scientific Program ◽  
Radioactive Ion Beam ◽  
And Storage

Status report of stable and radioactive ion beam production at GANIL

2008 ◽  
Vol 79 (2) ◽  
pp. 02A309 ◽  
Author(s):  
G. Gaubert ◽  
C. Barué ◽  
C. Canet ◽  
J. C. Cornell ◽  
M. Dubois ◽  
...  
Keyword(s):  
Ion Beam ◽  
Status Report ◽  
Radioactive Ion Beam ◽  
Beam Production

MINIBALL A Ge detector array for radioactive ion beam facilities

2001 ◽  
Vol 46 (1) ◽  
pp. 389-398 ◽  
Author(s):  
J. Eberth ◽  
G. Pascovici ◽  
H.G. Thomas ◽  
N. Warr ◽  
D. Weisshaar ◽  
...  
Keyword(s):  
Ion Beam ◽  
Detector Array ◽  
Radioactive Ion Beam ◽  
Ge Detector

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

Sign in / Sign up

Export Citation Format

Share Document