scholarly journals Bulk photovoltaic effect in BaTiO3-based ferroelectric oxides: An experimental and theoretical study

2021 ◽  
Vol 129 (8) ◽  
pp. 084106
Author(s):  
Subhajit Pal ◽  
S. Muthukrishnan ◽  
Banasree Sadhukhan ◽  
Sarath N. V. ◽  
D. Murali ◽  
...  
Keyword(s):  
Theoretical Study ◽  
Photovoltaic Effect ◽  
Ferroelectric Oxides

scholarly journals Photo-Sensitizing Thin-Film Ferroelectric Oxides Using Materials Databases and High-Throughput Calculations

2019 ◽  
Author(s):  
Jose J Plata ◽  
Javier Amaya Suárez ◽  
Santiago Cuesta-López ◽  
Antonio Marquez ◽  
Javier Fdez. Sanz
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Photovoltaic Effect ◽  
Electric Polarization ◽  
Ferroelectric Materials ◽  
Band Alignment ◽  
Band Gaps ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Ferroelectric Oxides

<div> <div> <div> <p>Conventional solar cell efficiency is usually limited by the Shockley-Queisser limit. This is not the case, however, for ferroelectric materials, which present a spontaneous electric polarization that is responsible for their bulk photovoltaic effect. Even so, most ferroelectric oxides exhibit large band gaps, reducing the amount of solar energy that can be harvested. In this work, a high-throughput approach to tune the electronic properties of thin-film ferroelectric oxides is presented. Materials databases were systematically used to find substrates for the epitaxial growth of KNbO3 thin-films, using topological and stability filters. Interface models were built and their electronic and optical properties were predicted. Strain and substrate-thin-film band interaction effects were examined in detail, in order to understand the interaction between both materials. We found substrates that significantly reduce the KNbO3 band gap, maintain KNbO3 polarization, and potentially present the right band alignment, favoring the electron injection in the substrate/electrode. This methodology can be easily applied to other ferroelectric oxides, optimizing their band gaps and accelerating the development of new ferroelectric-based solar cells. </p> </div> </div> </div>

scholarly journals Photo-Sensitizing Thin-Film Ferroelectric Oxides Using Materials Databases and High-Throughput Calculations

2019 ◽  
Author(s):  
Jose J Plata ◽  
Javier Amaya Suárez ◽  
Santiago Cuesta-López ◽  
Antonio Marquez ◽  
Javier Fdez. Sanz
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Photovoltaic Effect ◽  
Electric Polarization ◽  
Ferroelectric Materials ◽  
Band Alignment ◽  
Band Gaps ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Ferroelectric Oxides

<div> <div> <div> <p>Conventional solar cell efficiency is usually limited by the Shockley-Queisser limit. This is not the case, however, for ferroelectric materials, which present a spontaneous electric polarization that is responsible for their bulk photovoltaic effect. Even so, most ferroelectric oxides exhibit large band gaps, reducing the amount of solar energy that can be harvested. In this work, a high-throughput approach to tune the electronic properties of thin-film ferroelectric oxides is presented. Materials databases were systematically used to find substrates for the epitaxial growth of KNbO3 thin-films, using topological and stability filters. Interface models were built and their electronic and optical properties were predicted. Strain and substrate-thin-film band interaction effects were examined in detail, in order to understand the interaction between both materials. We found substrates that significantly reduce the KNbO3 band gap, maintain KNbO3 polarization, and potentially present the right band alignment, favoring the electron injection in the substrate/electrode. This methodology can be easily applied to other ferroelectric oxides, optimizing their band gaps and accelerating the development of new ferroelectric-based solar cells. </p> </div> </div> </div>

Theoretical study of the photovoltaic effect in thin variable-gap semiconductor layers

2003 ◽  
Vol 431-432 ◽  
pp. 457-460 ◽  
Author(s):  
B.S. Sokolovskii ◽  
V.K. Pysarevskii ◽  
O.V. Nemolovskii ◽  
Z. Swiatek
Keyword(s):  
Theoretical Study ◽  
Photovoltaic Effect

scholarly journals Progress and Perspectives on Aurivillius-Type Layered Ferroelectric Oxides in Binary Bi4Ti3O12-BiFeO3 System for Multifunctional Applications

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Shujie Sun ◽  
Xiaofeng Yin
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Photovoltaic Effect ◽  
Magnetic Ordering ◽  
Layered Perovskite ◽  
Aurivillius Phase ◽  
Electro Magnetic ◽  
Further Development ◽  
Ferroelectric Oxides ◽  
Rich Spectrum

Driven by potentially photo-electro-magnetic functionality, Bi-containing Aurivillius-type oxides of binary Bi4Ti3O12-BiFeO3 system with a general formula of Bin+1Fen−3Ti3O3n+3, typically in a naturally layered perovskite-related structure, have attracted increasing research interest, especially in the last twenty years. Benefiting from highly structural tolerance and simultaneous electric dipole and magnetic ordering at room temperature, these Aurivillius-phase oxides as potentially single-phase and room-temperature multiferroic materials can accommodate many different cations and exhibit a rich spectrum of properties. In this review, firstly, we discussed the characteristics of Aurivillius-phase layered structure and recent progress in the field of synthesis of such materials with various architectures. Secondly, we summarized recent strategies to improve ferroelectric and magnetic properties, consisting of chemical modification, interface engineering, oxyhalide derivatives and morphology controlling. Thirdly, we highlighted some research hotspots on magnetoelectric effect, catalytic activity, microwave absorption, and photovoltaic effect for promising applications. Finally, we provided an updated overview on the understanding and also highlighting of the existing issues that hinder further development of the multifunctional Bin+1Fen−3Ti3O3n+3 materials.

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