Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

2021 ◽  
Vol 129 (12) ◽  
pp. 124504
Author(s):  
Dae-Young Jeon ◽  
So Jeong Park ◽  
Sebastian Pregl ◽  
Thomas Mikolajick ◽  
Walter M. Weber
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Nanowires ◽  
Parallel Array

Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (7) ◽  
pp. 4578-4584 ◽  
Author(s):  
Dae-Young Jeon ◽  
Sebastian Pregl ◽  
So Jeong Park ◽  
Larysa Baraban ◽  
Gianaurelio Cuniberti ◽  
...  
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Thin Film Transistors ◽  
Si Nanowires ◽  
Parallel Array ◽  
Map Analysis

Transparent thin film transistors based on parallel array of Si nanowires

2010 ◽  
Author(s):  
Dong Hyun Lee ◽  
Jae Woong Choung ◽  
Yong Bum Pyun ◽  
Kwangsoo Son ◽  
Won Il Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Nanowires ◽  
Parallel Array

scholarly journals Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor

Membranes ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 758
Author(s):  
Tsung-Kuei Kang ◽  
Yu-Yu Lin ◽  
Han-Wen Liu ◽  
Che-Li Lin ◽  
Po-Jui Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Potential Candidate ◽  
Electrical Characteristics ◽  
Si Nanowires ◽  
Major Mechanism ◽  
Wide Range ◽  
External Connection

By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.

Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors

2013 ◽  
Vol 34 (6) ◽  
pp. 765-767 ◽  
Author(s):  
Richard E. Wahl ◽  
Fengyun Wang ◽  
Hugh E. Chung ◽  
George R. Kunnen ◽  
SenPo Yip ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Parallel Array

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Photo-Induced Threshold and Onset Voltage Shifts in Organic Thin-Film Transistors

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Onset Voltage
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