Large spin Hall angle enhanced by nitrogen incorporation in Pt films

2021 ◽  
Vol 118 (6) ◽  
pp. 062406
Author(s):  
Zhan Xu ◽  
Grayson Dao Hwee Wong ◽  
Jiaxuan Tang ◽  
Er Liu ◽  
Weiliang Gan ◽  
...  
2020 ◽  
Vol 507 ◽  
pp. 166860 ◽  
Author(s):  
Mingming Li ◽  
Lichuan Jin ◽  
Y.H. Rao ◽  
Zhiyong Zhong ◽  
Xiaoli Tang ◽  
...  

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
T. Wang ◽  
W. Wang ◽  
Y. Xie ◽  
M. A. Warsi ◽  
J. Wu ◽  
...  
Keyword(s):  

SPIN ◽  
2018 ◽  
Vol 08 (04) ◽  
pp. 1850018 ◽  
Author(s):  
Rajni Bansal ◽  
Gurudeo Nirala ◽  
Akash Kumar ◽  
Sujeet Chaudhary ◽  
P. K. Muduli

We report on growth optimization and magnetodynamic properties of [Formula: see text]-W/Co[Formula: see text]Fe[Formula: see text]B[Formula: see text] system. We show that a relatively low growth rate of [Formula: see text][Formula: see text]Å/s is essential for the stabilization of the [Formula: see text] phase of tungsten. The low growth rate allows for the residual oxygen present in the chamber to get incorporated into the growing film, which helps in the stabilization of [Formula: see text]-phase tungsten as evidenced by X-ray diffraction and X-ray photoelectron spectroscopy. Using these optimized growth conditions, we achieved the [Formula: see text] phase in tungsten thin films up to a thickness of 60[Formula: see text]nm. The ferromagnetic resonance measurements of [Formula: see text]-W/Co[Formula: see text]Fe[Formula: see text]B[Formula: see text] show a linear behavior of the Gilbert damping constant with the inverse of the thickness of the CoFeB layer, from which, we calculated spin mixing conductance to be [Formula: see text][Formula: see text]m[Formula: see text]. Using the inverse spin Hall effect measurements, we obtained a large spin Hall angle of [Formula: see text] in [Formula: see text]-W, which is achieved without using oxygen plasma during growth of tungsten.


Author(s):  
R. Bansal ◽  
G. Nirala ◽  
A. Kumar ◽  
S. Chaudhary ◽  
P. Muduli
Keyword(s):  

2018 ◽  
Vol 20 (5) ◽  
pp. 053002 ◽  
Author(s):  
Sascha Keller ◽  
Laura Mihalceanu ◽  
Matthias R Schweizer ◽  
Philipp Lang ◽  
Björn Heinz ◽  
...  

Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.


2021 ◽  
Vol 103 (24) ◽  
Author(s):  
Rui Lyu ◽  
Zachary Tuchfeld ◽  
Nishchhal Verma ◽  
Haidong Tian ◽  
Kenji Watanabe ◽  
...  

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