scholarly journals Insights into MnAl-C nano-twin defects by micromagnetic characterization

2021 ◽  
Vol 129 (9) ◽  
pp. 093902
Author(s):  
M. Gusenbauer ◽  
A. Kovacs ◽  
H. Oezelt ◽  
J. Fischbacher ◽  
P. Zhao ◽  
...  
Keyword(s):  
1984 ◽  
Vol 34 ◽  
Author(s):  
Zhu Peiyue ◽  
Sha Rozeng ◽  
Li Yanxiang

ABSTRACTThe effect of twin/tilt initiated in the process of graphite growth making the graphite curling and change from flake to vermicular and spheroidal is discussed. With the developing of the solidification process,the modifying elements enrich in the front of solid-liquid interface, the amount of twin defects in the graphite increases,its tilt fashion changes and the graphite formed varies from flake to vermicular and spheroidal. The modifying elements promote the formation of twin/tilt. When the modifying elements are insufficient for spheroidizing,the tilt orientation of twins is changeable,and the graphite formed is twisted. When the modifying elements are sufficient enough, the tilt orientation of twins becomes singular, and the graphite formed tends to be round. According to the energy and kinetics consideration of the formation of twin/tilt boundary, it is predicted that the twin plane would firstly adopt (10Tm), especially the (10T2) plane. This result coincides well with the experimental observations. It is proposed that the formation of SG can be divided into two steps: growth of graphite nucleus into spherulite by twin/tilt mechanism and brancing on it in a spiral mode.


2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.


2014 ◽  
Vol 522 ◽  
pp. 012036 ◽  
Author(s):  
D Gilks ◽  
L Lari ◽  
K Matsuzaki ◽  
R Evans ◽  
K McKenna ◽  
...  
Keyword(s):  

Author(s):  
Yeonjoon Park ◽  
Michael J. Cich ◽  
Rian Zhao ◽  
Petra Specht ◽  
Eicke R. Weber ◽  
...  

2007 ◽  
Vol 111 (39) ◽  
pp. 14312-14319 ◽  
Author(s):  
Sean Maksimuk ◽  
Xiaowei Teng ◽  
Hong Yang
Keyword(s):  

2020 ◽  
Vol 15 (20) ◽  
pp. 3254-3265
Author(s):  
Mengfan Li ◽  
Yuliang Yuan ◽  
Zhaoyu Yao ◽  
Lei Gao ◽  
Jiawei Zhang ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (61) ◽  
pp. 35887-35894 ◽  
Author(s):  
Ting Bian ◽  
Biao Sun ◽  
Sai Luo ◽  
Long Huang ◽  
Shan Su ◽  
...  

We present a seed-mediated approach to generate Au@PtCu nanostars with a five-fold twinned structure. The Au@PtCu nanostars exhibited better electrocatalytic properties in terms of activity and stability toward MOR relative to commercial Pt/C.


Author(s):  
T. D. Mishima ◽  
J. C. Keay ◽  
N. Goel ◽  
M. A. Ball ◽  
S. J. Chung ◽  
...  
Keyword(s):  

1989 ◽  
Vol 147 ◽  
Author(s):  
P. A. Stolk ◽  
A. Polman ◽  
W. C. Sinke

Abstract420 nm thick amorphous Si layers buried in a Si (100) or Si (111) matrix, produced by 350 keV Si-implantation, were irradiated using a pulsed ruby laser. Time-resolved reflectivity measurements show that melting can be initiated buried in the samples at the crystalline-amorphous interface. Melting is immediately followed by explosive crystallization of the buried amorphous layer, which is started from the crystalline top layer. The velocity of this self-sustained crystallization process is determined to be 15.0 ± 0.5 m/s for Si (100) and 14.0 ± 0.5 m/s for Si (111). RBS and cross-section TEM reveal that epitaxially grown crystalline Si, containing a high density of twin defects, is formed in both the Si (100) and the Si (111) sample.


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