High-performance polymer semiconductor-based ferroelectric transistor nonvolatile memory with a self-organized ferroelectric/dielectric gate insulator

2021 ◽  
Vol 118 (3) ◽  
pp. 033301
Author(s):  
Meili Xu ◽  
Xindong Zhang ◽  
Weihao Qi ◽  
Shizhang Li ◽  
Wei Wang
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Gate Insulator ◽  
Self Organized ◽  
High Performance Polymer ◽  
Polymer Semiconductor

High-Performance Polymer Semiconductor-Based Nonvolatile Memory Cells with Nondestructive Read-Out

2017 ◽  
Vol 121 (43) ◽  
pp. 24352-24357 ◽  
Author(s):  
Jia Sun ◽  
Min Je Kim ◽  
Myeongjae Lee ◽  
Dain Lee ◽  
Seongchan Kim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Memory Cells ◽  
High Performance Polymer ◽  
Polymer Semiconductor

scholarly journals An Intrinsically Stretchable High‐Performance Polymer Semiconductor with Low Crystallinity

2019 ◽  
Vol 29 (46) ◽  
pp. 1905340 ◽  
Author(s):  
Yu Zheng ◽  
Ging‐Ji Nathan Wang ◽  
Jiheong Kang ◽  
Mark Nikolka ◽  
Hung‐Chin Wu ◽  
...  
Keyword(s):  
High Performance ◽  
High Performance Polymer ◽  
Polymer Semiconductor ◽  
Low Crystallinity

Universal selection rule for surfactants used in miniemulsion processes for eco-friendly and high performance polymer semiconductors

2017 ◽  
Vol 10 (11) ◽  
pp. 2324-2333 ◽  
Author(s):  
Jangwhan Cho ◽  
Seongwon Yoon ◽  
Kyu Min Sim ◽  
Yong Jin Jeong ◽  
Chan Eon Park ◽  
...  
Keyword(s):  
High Performance ◽  
Selection Rule ◽  
Electronic Devices ◽  
Synthesis Method ◽  
Polymer Semiconductors ◽  
High Performance Polymer ◽  
Polymer Semiconductor ◽  
Colloid Synthesis

We demonstrate a universal polymer semiconductor colloid synthesis method to realize eco-friendly and high performance organic opto-electronic devices.

Design and effective synthesis methods for high-performance polymer semiconductors in organic field-effect transistors

2017 ◽  
Vol 1 (12) ◽  
pp. 2423-2456 ◽  
Author(s):  
Longxian Shi ◽  
Yunlong Guo ◽  
Wenping Hu ◽  
Yunqi Liu
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis Methods ◽  
Organic Field Effect Transistors ◽  
Polymer Semiconductors ◽  
High Performance Polymer ◽  
Polymer Semiconductor ◽  
Effective Synthesis

Design and effective synthesis methods for high-performance polymer semiconductor-based OFETs.

Amorphous IGZO Nonvolatile Memory Thin Film Transistors Using Ta2O5 Gate Dielectric

2012 ◽  
Vol 486 ◽  
pp. 233-238 ◽  
Author(s):  
C.J. Chiu ◽  
S.P. Chang ◽  
W.Y. Weng ◽  
S.J. Chang
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
Nonvolatile Memory Devices ◽  
High Dielectric

A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta2O5 gate insulator is proposed. The high-dielectric-constant material Ta2O5 was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (ΔVth = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta2O5 can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.

scholarly journals Nonhalogenated Solvent Processable and Printable High-Performance Polymer Semiconductor Enabled by Isomeric Nonconjugated Flexible Linkers

2018 ◽  
Vol 51 (13) ◽  
pp. 4976-4985 ◽  
Author(s):  
Ging-Ji Nathan Wang ◽  
Francisco Molina-Lopez ◽  
Hongyi Zhang ◽  
Jie Xu ◽  
Hung-Chin Wu ◽  
...  
Keyword(s):  
High Performance ◽  
High Performance Polymer ◽  
Polymer Semiconductor

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

Comparison of Two Evaluating Methods for Establishing the Marginal Fit on Four Heat - Pressed Resin Inlays

2018 ◽  
Vol 69 (4) ◽  
pp. 890-893
Author(s):  
Sorana Baciu ◽  
Cristian Berece ◽  
Adrian Florea ◽  
Andrada Voina Tonea ◽  
Ondine Lucaciu ◽  
...  
Keyword(s):  
High Performance ◽  
Clinical Results ◽  
Marginal Fit ◽  
High Performance Polymer ◽  
Investigation Methods ◽  
Evaluating Methods

In this study were compared two investigation methods, a bi- and tri-dimensional techniques by examining the marginal fit pressed in (BioHPP) Inlays. The study pruved that the BioHPP is a high performance polymer which provides very good clinical results.

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