On interface recombination, series resistance, and absorber diffusion length in BiI3 solar cells

2021 ◽  
Vol 129 (13) ◽  
pp. 133101
Author(s):  
Yuhuan Meng ◽  
Benjamin R. Magruder ◽  
Hugh W. Hillhouse
Keyword(s):  
Solar Cells ◽  
Diffusion Length ◽  
Series Resistance ◽  
Interface Recombination

All-Contactless Measurement of Series Resistance Distributions on Solar Cells with Photoluminescence Imaging

2011 ◽  
Author(s):  
M. Kasemann ◽  
L.M. Reindl ◽  
B. Michl ◽  
W. Warta ◽  
A. Schütt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Flow ◽  
Series Resistance ◽  
Electrical Contacts ◽  
New Method ◽  
Contactless Measurement ◽  
Sample Handling ◽  
Imaging Methods ◽  
Lateral Current

Abstract Conventional series resistance imaging methods require electrical contacts for current injection or extraction in order to generate lateral current flow in the solar cell. This paper presents a new method to generate lateral current flow in the solar cell without any electrical contacts. This reduces the sample handling complexity for inline application and allows for measurements on unfinished solar cell precursors.

Determining the exciton diffusion length of copper phthalocyanine in operating planar-heterojunction organic solar cells

2020 ◽  
Vol 89 (3) ◽  
pp. 30201 ◽  
Author(s):  
Xi Guan ◽  
Shiyu Wang ◽  
Wenxing Liu ◽  
Dashan Qin ◽  
Dayan Ban
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Diffusion Length ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Thick Layer ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length

Organic solar cells based on planar copper phthalocyanine (CuPc)/C60 heterojunction have been characterized, in which a 2 nm-thick layer of bathocuproine (BCP) is inserted into the CuPc layer. The thin layer of BCP allows hole current to tunnel it through but blocks the exciton diffusion, thereby altering the steady-state exciton profile in the CuPc zone (zone 1) sandwiched between BCP and C60. The short-circuit current density (JSC) of device is limited by the hole-exciton scattering effect at the BCP/CuPc (zone 1) interface. Based on the variation of JSC with the width of zone 1, the exciton diffusion length of CuPc is deduced to be 12.5–15 nm. The current research provides an easy and helpful method to determine the exciton diffusion lengths of organic electron donors.

Determination of Series Resistance in CdSeTe/CdTe Solar Cells by the Jsc–Voc Method

2020 ◽  
Author(s):  
Carey Reich ◽  
Arthur Onno ◽  
Alexandra Bothwell ◽  
Anna Kindvall ◽  
Zachary Holman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Cdte Solar Cells

Influence of Nickel Silicide Thin Film on Series Resistance of Silicon Solar Cells

2012 ◽  
Vol 8 (4) ◽  
pp. 628-631 ◽  
Author(s):  
Tao Li ◽  
Wenjing Wang ◽  
Chunlan Zhou ◽  
Zhengang Liu ◽  
Lei Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Series Resistance ◽  
Nickel Silicide ◽  
Silicon Solar Cells

Vertically Optimized Phase Separation with Improved Exciton Diffusion Enables High-Efficiency Organic Solar Cells with Thick Active Layers

2021 ◽  
Author(s):  
Yanming Sun ◽  
Yunhao Cai ◽  
Qian Li ◽  
Guanyu Lu ◽  
Hwa Sook Ryu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Phase Separation ◽  
Active Layer ◽  
Organic Solar Cells ◽  
High Efficiency ◽  
Diffusion Length ◽  
Active Layer Thickness ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length ◽  
Active Layers

Abstract The development of high-performance organic solar cells (OSCs) with thick active layers is of crucial importance for the roll-to-roll printing of large-area solar panels. Unfortunately, increasing the active layer thickness usually results in a significant reduction in efficiency. Herein, we fabricated efficient thick-film OSCs with an active layer consisting of one polymer donor and two non-fullerene acceptors. The two acceptors were found to possess enlarged exciton diffusion length in the mixed phase, which is beneficial to exciton generation and dissociation. Additionally, layer by layer approach was employed to optimize the vertical phase separation. Benefiting from the synergetic effects of enlarged exciton diffusion length and graded vertical phase separation, a record high efficiency of 17.31% (certified value of 16.9%) was obtained for the 300 nm-thick OSC, with an unprecedented short-circuit current density of 28.36 mA cm−2, and a high fill factor of 73.0%. Moreover, the device with an active layer thickness of 500 nm also shows a record efficiency of 15.21%. This work provides new insights into the fabrication of high-efficiency OSCs with thick active layers.

Extraction of p-n junction properties and series resistance in GaAs nanowire-based solar cells using light concentration

2019 ◽  
Vol 30 (9) ◽  
pp. 094001 ◽  
Author(s):  
Dmitry Mikulik ◽  
Mikhail Mintairov ◽  
Ian Nachemson ◽  
Valery Evstropov ◽  
Pablo Romero-Gomez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Gaas Nanowire ◽  
Light Concentration

scholarly journals The Role of Silicon Heterojunction and TCO Barriers on the Operation of Silicon Heterojunction Solar Cells: Comparison between Theory and Experiment

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Yaser Abdulraheem ◽  
Moustafa Ghannam ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Ivan Gordon
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Surface Passivation ◽  
Series Resistance ◽  
Crystalline Silicon ◽  
Thermionic Emission ◽  
Analytical Description ◽  
Theoretical Explanation ◽  
The Impact

Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.

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