Cross-sectional Kelvin probe force microscopy on Cu(In,Ga)Se2 solar cells: Influence of RbF and KF post-deposition treatment on the surface potential of the absorber layer

2020 ◽  
Vol 117 (24) ◽  
pp. 243901
Author(s):  
Jasmin Seeger ◽  
Florian Wilhelmi ◽  
Jonas Schundelmeier ◽  
Setareh Zahedi-Azad ◽  
Roland Scheer ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Potential ◽  
Absorber Layer ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Post Deposition

Influence of surface properties on the performance of Cu(In,Ga)(Se,S)2thin-film solar cells using Kelvin probe force microscopy

RSC Advances ◽  
2015 ◽  
Vol 5 (51) ◽  
pp. 40719-40725 ◽  
Author(s):  
JungYup Yang ◽  
Dongho Lee ◽  
KwangSoo Huh ◽  
SeungJae Jung ◽  
JiWon Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Surface Properties ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Absorber Layer ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Graded Band Gap

We have investigated the sulfurization process in a Cu(In,Ga)(Se,S)2absorber layer fabricated by a two-step sputter and selenization/sulfurization method in order to make an ideal double-graded band-gap profile and increase the open circuit voltage.

scholarly journals Measurement of electrostatic tip–sample interactions by time-domain Kelvin probe force microscopy

2020 ◽  
Vol 11 ◽  
pp. 911-921
Author(s):  
Christian Ritz ◽  
Tino Wagner ◽  
Andreas Stemmer
Keyword(s):  
Frequency Shift ◽  
Surface Potential ◽  
Electrostatic Force ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Atomic Force ◽  
Alternative Approach ◽  
Dc Component ◽  
Lock In

Kelvin probe force microscopy is a scanning probe technique used to quantify the local electrostatic potential of a surface. In common implementations, the bias voltage between the tip and the sample is modulated. The resulting electrostatic force or force gradient is detected via lock-in techniques and canceled by adjusting the dc component of the tip–sample bias. This allows for an electrostatic characterization and simultaneously minimizes the electrostatic influence onto the topography measurement. However, a static contribution due to the bias modulation itself remains uncompensated, which can induce topographic height errors. Here, we demonstrate an alternative approach to find the surface potential without lock-in detection. Our method operates directly on the frequency-shift signal measured in frequency-modulated atomic force microscopy and continuously estimates the electrostatic influence due to the applied voltage modulation. This results in a continuous measurement of the local surface potential, the capacitance gradient, and the frequency shift induced by surface topography. In contrast to conventional techniques, the detection of the topography-induced frequency shift enables the compensation of all electrostatic influences, including the component arising from the bias modulation. This constitutes an important improvement over conventional techniques and paves the way for more reliable and accurate measurements of electrostatics and topography.

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