scholarly journals Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness

2020 ◽  
Vol 117 (25) ◽  
pp. 252102
Author(s):  
Dat Q. Tran ◽  
Rosalia Delgado-Carrasco ◽  
John F. Muth ◽  
Tania Paskova ◽  
Muhammad Nawaz ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Thermal Transport ◽  
Boundary Scattering

scholarly journals Publisher's Note: “Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness” [Appl. Phys Lett. 117, 252102 (2020)]

2021 ◽  
Vol 118 (10) ◽  
pp. 109902
Author(s):  
Dat Q. Tran ◽  
Rosalia Delgado-Carrascon ◽  
John F. Muth ◽  
Tania Paskova ◽  
Muhammad Nawaz ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Thermal Transport ◽  
Boundary Scattering

scholarly journals Erratum: “Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness” [Appl. Phys. Lett. 117, 252102 (2020)]

2021 ◽  
Vol 118 (18) ◽  
pp. 189901
Author(s):  
Dat Q. Tran ◽  
Rosalia Delgado-Carrascon ◽  
John F. Muth ◽  
Tania Paskova ◽  
Muhammad Nawaz ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Thermal Transport ◽  
Boundary Scattering

Impact of Porosity and Boundary Scattering on Thermal Transport in Diameter-Modulated Nanowires

2021 ◽  
Author(s):  
Abhinav Malhotra ◽  
Gozde Tutuncuoglu ◽  
Sampath Kommandur ◽  
Patrick Creamer ◽  
Aravindh Rajan ◽  
...  
Keyword(s):  
Thermal Transport ◽  
Boundary Scattering

Thermal Transport in Few-Quintuple Bi2Te3 Thin Films and Nanoribbons

2011 ◽  
Author(s):  
Bo Qiu ◽  
Xiulin Ruan
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Molecular Dynamics ◽  
Temperature Dependence ◽  
Thermal Transport ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Md Simulations ◽  
Boundary Scattering ◽  
Nanoporous Films

In this work, thermal conductivity of perfect and nanoporous few-quintuple Bi2Te3 thin films as well as nanoribbons with perfect and zig-zag edges is investigated using molecular dynamics (MD) simulations with Green-Kubo method. We find minimum thermal conductivity of perfect Bi2Te3 thin films with three quintuple layers (QLs) at room temperature, and we believe it originates from the interplay between inter-quintuple coupling and phonon boundary scattering. Nanoporous films and nanoribbons are studied for additional phonon scattering channels in suppressing thermal conductivity. With 5% porosity in Bi2Te3 thin films, the thermal conductivity is found to decrease by a factor of 4–6, depending on temperature, comparing to perfect single QL. For nanoribbons, width and edge shape are found to strongly affect the temperature dependence as well as values of thermal conductivity.

Revisiting Boundary Scattering in Thermal Transport at the Nanometer Scale

2009 ◽  
Author(s):  
Sanjiv Sinha
Keyword(s):  
Thermal Transport ◽  
Recent Progress ◽  
Phonon Scattering ◽  
Volume Ratio ◽  
Nanometer Scale ◽  
Boundary Scattering ◽  
Nano Structures ◽  
Thermoelectric Energy ◽  
The Impact ◽  
Recent Experimental Work

Understanding and exploiting thermal transport phenomena at the nanometer scale can lead to improved thermoelectric energy conversion, novel NEMs-based sensors and facilitate the scaling of semiconductor devices to atomistic scales. The increased surface area to volume ratio in micro- and nano-structures leads to the dominance of boundary scattering. Recent experimental work suggests that the impact is even more than previously understood. This paper reviews recent progress in modeling phonon scattering at rough surfaces.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

The stabilization of B.C.C. Cu in Cu/Nb nanolayered composites

1996 ◽  
Vol 54 ◽  
pp. 228-229
Author(s):  
H. Kung ◽  
A.J. Griffin ◽  
Y.C. Lu ◽  
K.E. Sickafus ◽  
T.E. Mitchell ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Layer Thickness ◽  
Volume Fraction ◽  
Ion Beam ◽  
High Strength ◽  
Cross Sectional ◽  
Metastable Structure ◽  
High Resolution Tem ◽  
Potential Improvement ◽  
Two Phases

Materials with compositionally modulated structures have gained much attention recently due to potential improvement in electrical, magnetic and mechanical properties. Specifically, Cu-Nb laminate systems have been extensively studied mainly due to the combination of high strength, and superior thermal and electrical conductivity that can be obtained and optimized for the different applications. The effect of layer thickness on the hardness, residual stress and electrical resistivity has been investigated. In general, increases in hardness and electrical resistivity have been observed with decreasing layer thickness. In addition, reduction in structural scale has caused the formation of a metastable structure which exhibits uniquely different properties. In this study, we report the formation of b.c.c. Cu in highly textured Cu/Nb nanolayers. A series of Cu/Nb nanolayered films, with alternating Cu and Nb layers, were prepared by dc magnetron sputtering onto Si {100} wafers. The nominal total thickness of each layered film was 1 μm. The layer thickness was varied between 1 nm and 500 nm with the volume fraction of the two phases kept constant at 50%. The deposition rates and film densities were determined through a combination of profilometry and ion beam analysis techniques. Cross-sectional transmission electron microscopy (XTEM) was used to examine the structure, phase and grain size distribution of the as-sputtered films. A JEOL 3000F high resolution TEM was used to characterize the microstructure.

On the Effect of 2-Layer Thickness by High-Specific Gravity Armor Blocks on Wave Reflection

1999 ◽  
Author(s):  
Masahiro Ito ◽  
Yuitch Iwagaki ◽  
Hiroshi Murakami ◽  
Kenji Nemoto ◽  
Masato Yamamoto ◽  
...  
Keyword(s):  
Specific Gravity ◽  
Layer Thickness ◽  
Wave Reflection ◽  
High Specific Gravity
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