Influence of nonstoichiometry point defects on electronic thermal conductivity

2020 ◽  
Vol 117 (21) ◽  
pp. 213901
Author(s):  
Xin Liang ◽  
Changan Wang ◽  
Dou Jin
2018 ◽  
Vol 281 ◽  
pp. 767-773
Author(s):  
Zheng Li ◽  
Wei Pan

The first principle calculation as well as the Boltzmann transport calculation have been employed to study the high temperature electronic transport properties of pyrochlore La2Zr2O7. Combing constant scattering time approximation and experiment data, the electronic thermal conductivity and electron concentration are calculated as a function of temperature. The electronic thermal conductivity is 2.6×10-4 W/(m.s) at 1270K and 7.2×10-3 W/(m.s) at 1770K. The electron concentration increase rapidly with when the temperature is above 1600K.


2004 ◽  
Vol 70 (15) ◽  
Author(s):  
Roberto Raimondi ◽  
Giorgio Savona ◽  
Peter Schwab ◽  
Thomas Lück

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yaqiong Zhong ◽  
Yong Luo ◽  
Xie Li ◽  
Jiaolin Cui

AbstractAgInTe2 compound has not received enough recognition in thermoelectrics, possibly due to the fact that the presence of Te vacancy (VTe) and antisite defect of In at Ag site (InAg) degrades its electrical conductivity. In this work, we prepared the Ag1-xInTe2 compounds with substoichiometric amounts of Ag and observed an ultralow lattice thermal conductivity (κL = 0.1 Wm−1K−1) for the sample at x = 0.15 and 814 K. This leads to more than 2-fold enhancement in the ZT value (ZT = 0.62) compared to the pristine AgInTe2. In addition, we have traced the origin of the untralow κL using the Callaway model. The results attained in this work suggest that the engineering of the silver vacancy (VAg) concentration is still an effective way to manipulate the thermoelectric performance of AgInTe2, realized by the increased point defects and modified crystal structure distortion as the VAg concentration increases.


2007 ◽  
Vol 463-465 ◽  
pp. 36-39
Author(s):  
H. Adachi ◽  
P. Miranovic ◽  
M. Ichioka ◽  
K. Machida

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