scholarly journals Hydrogen density-of-states distribution in β-Ga2O3

2021 ◽  
Vol 129 (19) ◽  
pp. 195704
Author(s):  
N. H. Nickel ◽  
K. Geilert
Keyword(s):  
Density Of States ◽  
Hydrogen Density

Determination of Hydrogen Density of States in Amorphous Silicon Using Fractional Evolution Experiments

1997 ◽  
Vol 467 ◽  
Author(s):  
A. J. Franz ◽  
W. B. Jackson ◽  
J. L. Gland
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Film ◽  
Mean Field ◽  
Frequency Factor ◽  
Silicon Films ◽  
Hydrogen Density ◽  
Heating And Cooling ◽  
Novel Method

ABSTRACTHydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. We have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary memods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, we demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. We further validate both methods by analyzing experimental fractional evolution data foran amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.

A Unified Description of the Density of States for Hydrogen and Electrons in Amorphous Silicon

1994 ◽  
Vol 336 ◽  
Author(s):  
S.C. Deane ◽  
M.J. Powell
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Correlation Energy ◽  
Dangling Bond ◽  
Hydrogen Binding ◽  
Electronic Density ◽  
Hydrogen Density ◽  
Electronic Density Of States ◽  
Defect Sites ◽  
Pool Model

ABSTRACTWe derive the hydrogen density of states for hydrogenated Amorphous silicon (a-Si:H), which is completely consistent with the electronic density of states for the defect pool model. If silicon dangling bond energies are distributed in energy, as in a defect pool model, then the hydrogen density of states becomes quite complex, with the hydrogen binding energy dependent on the Fermi level and dangling bond transition energy. We demonstrate that the electronic density of states for dangling bonds is almost identical to our previous defect pool model, while the hydrogen density of states can account for the results of hydrogenation-dehydrogenation experiments. The effective hydrogen correlation energy is variable, being negative for most hydrogen binding sites, but positive for most defect sites.

ON THE MICROSCOPIC BEHAVIOR OF HYDROGEN IN AMORPHOUS SILICON

2005 ◽  
Vol 19 (15) ◽  
pp. 683-695 ◽  
Author(s):  
BLAIR R. TUTTLE
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Density Functional ◽  
Defect Formation ◽  
Microscopic Theory ◽  
Electronic Structure Calculations ◽  
Hydrogen Density ◽  
Structure Calculations

Microscopic aspects of the behavior of hydrogen in amorphous silicon are reviewed in the context of density functional electronic structure calculations. The relative energetics of various hydrogen complexes are presented. Also, a hydrogen density of states picture is used to describe hydrogen-related phenomena including diffusion and defect formation. A microscopic theory for hydrogen-related metastability will be discussed in detail.

Determination of the hydrogen density of states in amorphous hydrogenated silicon

1998 ◽  
Vol 227-230 ◽  
pp. 143-147 ◽  
Author(s):  
W.B Jackson ◽  
A.J Franz ◽  
H.-C Jin ◽  
J.R Abelson ◽  
J.L Gland
Keyword(s):  
Density Of States ◽  
Hydrogenated Silicon ◽  
Hydrogen Density ◽  
Amorphous Hydrogenated Silicon

Hydrogen density-of-states in polycrystalline silicon

2003 ◽  
Vol 82 (18) ◽  
pp. 3029-3031 ◽  
Author(s):  
N. H. Nickel ◽  
K. Brendel
Keyword(s):  
Density Of States ◽  
Polycrystalline Silicon ◽  
Hydrogen Density

Hydrogen Density of States and Defects Densities in a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
S C Deane ◽  
M J Powell ◽  
J Robertson
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Unified Model ◽  
Band Tail ◽  
Hydrogen Density ◽  
The Creation

AbstractFurther details are given of a unified model of the hydrogen density of states and defect pool of a-Si:H. The model is compared to other defect models and extended to describe a-Si alloys and the creation of valence band tail states during growth.

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