Directional shock diode behavior through the interaction of geometric voids in engineered polymer assemblies

2020 ◽  
Vol 128 (24) ◽  
pp. 245903
Author(s):  
Brittany A. Branch ◽  
Geoff Frank ◽  
Andrew Abbott ◽  
David Lacina ◽  
Dana M. Dattelbaum ◽  
...  
Keyword(s):  
Diode Behavior

Photo-responsive Schottky Diode Behavior of a Donor-Acceptor Co-crystal with Violet Blue Light Emission

CrystEngComm ◽  
2021 ◽  
Author(s):  
Sanjay Kumar ◽  
Soumen Singha ◽  
Rajkumar Jana ◽  
RITUPARNA MONDAL ◽  
Partha Pratim Bag ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Property ◽  
Schottky Diode ◽  
Electronic Transport ◽  
Supramolecular Structure ◽  
Light Emission ◽  
Electronic Transport Property ◽  
Blue Light Emission ◽  
Donor Acceptor ◽  
Diode Behavior

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...

scholarly journals Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 412 ◽  
Author(s):  
Evans Bernardin ◽  
Christopher Frewin ◽  
Richard Everly ◽  
Jawad Ul Hassan ◽  
Stephen Saddow
Keyword(s):  
Silicon Carbide ◽  
High Performance ◽  
Electrical Characterization ◽  
Electrode Impedance ◽  
Voltage Range ◽  
Promising Solution ◽  
Multiple Materials ◽  
Diode Behavior ◽  
Materials Used ◽  
P Type

Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K μm2. Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of ~2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was ~7.5 nArms over a voltage range of −50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 ± 130 kΩ (GSA = 496 µm2) to 46.5 ± 4.80 kΩ (GSA = 500 K µm2). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.

Metastable Variations of the Fill Factor in CIGS Thin Film Solar Cells

2009 ◽  
Vol 1165 ◽  
Author(s):  
Aleksander Urbaniak ◽  
Małgorzata Igalson
Keyword(s):  
Fill Factor ◽  
Elevated Temperatures ◽  
Reverse Voltage ◽  
Cell Behaviors ◽  
Cigs Thin Film ◽  
Current Voltage ◽  
Shallow Acceptors ◽  
Current Voltage Characteristics ◽  
Diode Behavior ◽  
Kinetics Of

AbstractWe investigate the origin of fill factor changes induced by reverse bias treatment. Evolution of current-voltage characteristics have been measured during application of reverse voltage bias. Two different cell behaviors have been identified. At elevated temperatures one kind of the devices strongly deteriorates and exhibit so called double diode behavior. On the other hand, in the same conditions another cells keep their fill factor almost constant. We correlate the fill factor changes with the kinetics of capacitance and show that although increased number of shallow acceptors itself cannot induce this severe FF deterioration, it may strongly influence position of the Fermi level at the heterointerface that in a presence of an electron barrier is crucial for the device behavior.

Synthesis of an electrically conductive square planar copper(ii) complex and its utilization in the fabrication of a photosensitive Schottky diode device and DFT study

2020 ◽  
Vol 44 (27) ◽  
pp. 11622-11630 ◽  
Author(s):  
Samim Khan ◽  
Soumi Halder ◽  
Arka Dey ◽  
Basudeb Dutta ◽  
Partha Pratim Ray ◽  
...  
Keyword(s):  
Charge Transport ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Chain Structure ◽  
Dft Study ◽  
Electrically Conductive ◽  
Π Interactions ◽  
Square Planar ◽  
Efficient Charge ◽  
Diode Behavior

A naphthalene based square planar copper(ii) complex shows significant C–H⋯π interactions to form a supramolecular chain structure. The complex shows efficient charge transport and reveals Schottky barrier diode behavior.

scholarly journals Bioinspired inner microstructured tube controlled capillary rise

2019 ◽  
Vol 116 (26) ◽  
pp. 12704-12709 ◽  
Author(s):  
Chuxin Li ◽  
Haoyu Dai ◽  
Can Gao ◽  
Ting Wang ◽  
Zhichao Dong ◽  
...  
Keyword(s):  
Energy Efficient ◽  
High Speed ◽  
Capillary Rise ◽  
Water Film ◽  
Bulk Water ◽  
External Energy ◽  
Practical Applications ◽  
Agricultural Applications ◽  
Diode Behavior ◽  
Water Elevation

Effective, long-range, and self-propelled water elevation and transport are important in industrial, medical, and agricultural applications. Although research has grown rapidly, existing methods for water film elevation are still limited. Scaling up for practical applications in an energy-efficient way remains a challenge. Inspired by the continuous water cross-boundary transport on the peristome surface ofNepenthes alata, here we demonstrate the use of peristome-mimetic structures for controlled water elevation by bending biomimetic plates into tubes. The fabricated structures have unique advantages beyond those of natural pitcher plants: bulk water diode transport behavior is achieved with a high-speed passing state (several centimeters per second on a milliliter scale) and a gating state as a result of the synergistic effect between peristome-mimetic structures and tube curvature without external energy input. Significantly, on further bending the peristome-mimetic tube into a “candy cane”-shaped pipe, a self-siphon with liquid diode behavior is achieved. Such a transport mechanism should inspire the design of next generation water transport devices.

scholarly journals Selective modification of aligned carbon nanotubes by N2 plasma and their diode behavior

RSC Advances ◽  
2018 ◽  
Vol 8 (19) ◽  
pp. 10680-10685 ◽  
Author(s):  
Hsin-Jung Tsai ◽  
Yu-Ying Su ◽  
Chao-Chi Tseng ◽  
Wen-Kuang Hsu
Keyword(s):  
Carbon Nanotubes ◽  
Aligned Carbon Nanotubes ◽  
Diode Behavior ◽  
N2 Plasma

Fabrication of p–n junctions on aligned carbon nanotubes by N2 plasma.

scholarly journals Photosensitive Schottky barrier diode behavior of a semiconducting Co(iii)–Na complex with a compartmental Schiff base ligand

RSC Advances ◽  
2019 ◽  
Vol 9 (60) ◽  
pp. 34710-34719 ◽  
Author(s):  
Kousik Ghosh ◽  
Sayantan Sil ◽  
Partha Pratim Ray ◽  
Joaquín Ortega-Castro ◽  
Antonio Frontera ◽  
...  
Keyword(s):  
Schiff Base ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Theoretical Investigation ◽  
Schiff Base Ligand ◽  
Schottky Barrier Diode ◽  
Sodium Complex ◽  
Diode Behavior ◽  
Schottky Device

The opto-electronic properties of a cobalt(iii)–sodium complex have been studied with the help of both experimental and theoretical investigation. The complex has also been used to fabricate an effective photosensitive Schottky device.

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