The relationship between the doping concentration and d0 ferromagnetism in n-type 4H-SiC

2020 ◽  
Vol 128 (19) ◽  
pp. 193901
Author(s):  
Bo Peng ◽  
Jiajie Chen ◽  
Jichao Hu ◽  
Xingzhong Cao ◽  
Lei Yuan ◽  
...  
Keyword(s):  
Doping Concentration ◽  
The Relationship ◽  
D0 Ferromagnetism

The Relationship between Resistivity and Boron Doping Concentration of Single and Polycrystalline Diamond

1996 ◽  
Vol 154 (1) ◽  
pp. 385-393 ◽  
Author(s):  
M. Werner ◽  
R. Job ◽  
A. Zaitzev ◽  
W. R. Fahrner ◽  
W. Seifert ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Polycrystalline Diamond ◽  
Boron Doping ◽  
The Relationship

scholarly journals Optimizing thermocouple’s ZT through design innovation

2021 ◽  
Author(s):  
Tinggang Zhang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Power Output ◽  
Doping Concentration ◽  
Optimal Combination ◽  
Original Design ◽  
The One ◽  
The Relationship

Abstract In this work, we demonstrate that in parallel with the one existed at high doping concentration, there also exists an optimal combination of the transport properties of a thermoelectric material at low doping concentration as the curve of the relationship between electrical conductivity and doping concentration is rigidly shifted toward lower doping concentration without disturbing the Seebeck coefficient and the thermal conductivity. Based on this finding, a new concept for thermocouple design is developed to improve the thermocouple’s efficiency and power output. The analytical model developed for the new thermocouple indicated that its efficiency and power output can be more than tripled as compared to those of the original design. A single thermocouple made of Silicon semiconductors was simulated numerically using different sets of input parameters. The results showed that the new thermocouple’s efficiency and power output can be improved significantly.

LUMINESCENCE CHARACTERISTICS OF RARE-EARTH ERBIUM ION-DOPED NANOCRYSTALLINE ZINC OXIDE

2009 ◽  
Vol 18 (04) ◽  
pp. 649-656 ◽  
Author(s):  
SONG GUO-LI
Keyword(s):  
Doping Concentration ◽  
Annealing Temperature ◽  
Emission Spectra ◽  
Chemical Precipitation ◽  
Nanocrystalline Powders ◽  
Precipitation Method ◽  
Characteristic Emission ◽  
Excitation State ◽  
Pl Intensity ◽  
The Relationship

Er3+ -doped ZnO nanocrystalline powders are successfully prepared by the chemical precipitation method, using various doping concentrations of Er3+ at different annealing temperatures from 500°C to 900°C. The characteristic emission peaks of the excitation state 4S3/2 (550 nm), 2 H 11/2 (520 nm), 4 F 5/2 (455 nm) → 4 I 15/2 transition of Er3+ ions are observed in a wide visible band of the ZnO host. The relationship between the PL intensity of integration of nanocrystalline ZnO:Er3+ and the annealing temperature and doping concentration of Er3+ is given; it is found that the optimal dopant concentration and annealing temperature are 4.0 × 10-3 M and 850°C for the 4 S 3/2 → 4 I 15/2 (550 nm) and 4 F 5/2 → 4 I 15/2 (455 nm) transition of Er3+ . Based on these results, the mechanism of the emission spectra of ZnO is analyzed and its defects on the spectral properties are discussed. An energy transfer from excited states of ZnO hosts to doping Er3+ ion centers is revealed by the fact that PL intensity of the peaks of nanocrystalline ZnO:Er3+ changes with the annealing temperature and doping concentration of Er3+ , and another from the 4f–4f transition of Er3+ .

Simulation Research of Tapered Sidewall Trench Superjunction MOSFETs

2014 ◽  
Vol 568-570 ◽  
pp. 1196-1200
Author(s):  
Jun Liu ◽  
Li Li ◽  
Yue Yang Liu ◽  
Wen Yu Gao ◽  
Rui Jin ◽  
...  
Keyword(s):  
Process Control ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Vertical Sidewall ◽  
Simulation Research ◽  
Charge Imbalance ◽  
Dopant Profile ◽  
Relationship Of ◽  
The Relationship ◽  
Uniform Doping

This paper studied the relationship of breakdown voltage and charge imbalance of 600V tapered sidewall trench superjunction MOSFETs. Simulation structures including three types of structures: 600V vertical sidewall trench superjunction MOSFET (Type1) and 600V tapered sidewall trench superjunction MOSFET (Type2 and Type3). Under the condition of P-column and N-column uniform doping, Type1 structure has the highest peak breakdown voltage. Type2 structure has the lowest peak breakdown voltage under the condition of P-column doping concentration slightly lower than N-column doping concentration. The peak breakdown voltage of structure Type3 is higher than Type2, but the sensitivity of breakdown voltage in the charge imbalance state is the highest. The Gaussian dopant profile in P-column can make the peak breakdown voltage of the tapered sidewall trench superjunction MOSFET achieved the same level of the peak breakdown voltage of the vertical sidewall trench superjunction MOSFET. It is concluded that the sensitivity of breakdown voltage in the charge imbalance state is related to the structure: Type2 structure under the condition of P-column undercompensation and Type3 structure under the condition of P-column overcompensation are both beneficial to the process control.

scholarly journals Determination of Barrier Height and Doping Density of a Schottky Diode from Infrared Photoresponse Measurements

1992 ◽  
Vol 45 (6) ◽  
pp. 781 ◽  
Author(s):  
Vincent WL Chin ◽  
Stephen M Newbury
Keyword(s):  
Schottky Diode ◽  
Doping Concentration ◽  
Reverse Bias ◽  
Doping Density ◽  
Zero Bias ◽  
Impurity Doping ◽  
Photo Response ◽  
Photoelectric Measurements ◽  
The Relationship

The impurity doping concentration of a semiconductor is commonly determined by measuring the C-V profile of a Schottky diode. In this work, an alternative method is utilised to determine the impurity doping density of a moderately acceptor-doped Schottky diode using infrared photoelectric measurements. Due to the image lowering effect, the barrier is lowered with the increasing field or reverse bias. Having determined the relationship between the reverse bias and the lowered barrier, the doping density and the zero bias barrier eight from the infrared photo response measurements can be accurately determined.

Interstellar gas in the central region of the Galaxy

1967 ◽  
Vol 31 ◽  
pp. 239-251 ◽  
Author(s):  
F. J. Kerr
Keyword(s):  
Central Region ◽  
Galactic Plane ◽  
Neutral Hydrogen ◽  
Continuum Emission ◽  
Galactic Centre ◽  
Interstellar Gas ◽  
Hydrogen Recombination ◽  
The Galaxy ◽  
Centre Region ◽  
The Relationship

A review is given of information on the galactic-centre region obtained from recent observations of the 21-cm line from neutral hydrogen, the 18-cm group of OH lines, a hydrogen recombination line at 6 cm wavelength, and the continuum emission from ionized hydrogen.Both inward and outward motions are important in this region, in addition to rotation. Several types of observation indicate the presence of material in features inclined to the galactic plane. The relationship between the H and OH concentrations is not yet clear, but a rough picture of the central region can be proposed.

The relationship of the scleractinian corals to the rugose corals

Paleobiology ◽  
1980 ◽  
Vol 6 (02) ◽  
pp. 146-160 ◽  
Author(s):  
William A. Oliver
Keyword(s):  
Critical Points ◽  
Scleractinian Corals ◽  
Convincing Evidence ◽  
Early Triassic ◽  
Rugose Corals ◽  
History Of ◽  
The Subject ◽  
Relationship Of ◽  
The Relationship ◽  
Biologic Factors

The Mesozoic-Cenozoic coral Order Scleractinia has been suggested to have originated or evolved (1) by direct descent from the Paleozoic Order Rugosa or (2) by the development of a skeleton in members of one of the anemone groups that probably have existed throughout Phanerozoic time. In spite of much work on the subject, advocates of the direct descent hypothesis have failed to find convincing evidence of this relationship. Critical points are:(1) Rugosan septal insertion is serial; Scleractinian insertion is cyclic; no intermediate stages have been demonstrated. Apparent intermediates are Scleractinia having bilateral cyclic insertion or teratological Rugosa.(2) There is convincing evidence that the skeletons of many Rugosa were calcitic and none are known to be or to have been aragonitic. In contrast, the skeletons of all living Scleractinia are aragonitic and there is evidence that fossil Scleractinia were aragonitic also. The mineralogic difference is almost certainly due to intrinsic biologic factors.(3) No early Triassic corals of either group are known. This fact is not compelling (by itself) but is important in connection with points 1 and 2, because, given direct descent, both changes took place during this only stage in the history of the two groups in which there are no known corals.

Choosing a Markov blanket

2020 ◽  
Vol 43 ◽  
Author(s):  
Thomas Parr
Keyword(s):  
Markov Blanket ◽  
Target Article ◽  
The Relationship

Abstract This commentary focuses upon the relationship between two themes in the target article: the ways in which a Markov blanket may be defined and the role of precision and salience in mediating the interactions between what is internal and external to a system. These each rest upon the different perspectives we might take while “choosing” a Markov blanket.

Tinkering with cognitive gadgets: Cultural evolutionary psychology meets active inference

2019 ◽  
Vol 42 ◽  
Author(s):  
Paul Benjamin Badcock ◽  
Axel Constant ◽  
Maxwell James Désormeau Ramstead
Keyword(s):  
Evolutionary Psychology ◽  
Research Program ◽  
Active Inference ◽  
Innovative Research ◽  
Cognitive Faculties ◽  
Cultural Evolutionary ◽  
The Relationship

Abstract Cognitive Gadgets offers a new, convincing perspective on the origins of our distinctive cognitive faculties, coupled with a clear, innovative research program. Although we broadly endorse Heyes’ ideas, we raise some concerns about her characterisation of evolutionary psychology and the relationship between biology and culture, before discussing the potential fruits of examining cognitive gadgets through the lens of active inference.

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