Effective mass of heavy, light, and spin split-off band electron and hole g-factor in cubic perovskite materials

2020 ◽  
Vol 128 (23) ◽  
pp. 235109
Author(s):  
David Ompong ◽  
Godfred Inkoom ◽  
Jai Singh
Keyword(s):  
Effective Mass ◽  
G Factor ◽  
Band Electron ◽  
Perovskite Materials

Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

1995 ◽  
Vol 34 (Part 2, No. 9B) ◽  
pp. L1178-L1179 ◽  
Author(s):  
M. Drechsler ◽  
D. M. Hofmann ◽  
B. K. Meyer ◽  
T. Detchprohm ◽  
H. Amano ◽  
...  
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Electron Effective Mass ◽  
Band Electron ◽  
Conduction Band Electron

Cyclotron effective mass and Landé g factor in GaAs–Ga1−xAlxAs quantum wells under growth-direction applied magnetic fields

2006 ◽  
Vol 99 (10) ◽  
pp. 104303 ◽  
Author(s):  
M. de Dios-Leyva ◽  
N. Porras-Montenegro ◽  
H. S. Brandi ◽  
L. E. Oliveira
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Effective Mass ◽  
Growth Direction ◽  
G Factor

QUANTUM HALL EFFECT IN A MULTI-VALLEY TWO-DIMENSIONAL ELECTRON SYSTEM

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1388-1397 ◽  
Author(s):  
M. SHAYEGAN ◽  
E. P. DE POORTERE ◽  
O. GUNAWAN ◽  
Y. P. SHKOLNIKOV ◽  
E. TUTUC ◽  
...  
Keyword(s):  
Effective Mass ◽  
Quantum Hall ◽  
Electron System ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Breaking Strain ◽  
G Factor ◽  
Dimensional Electron System ◽  
Fermi Contour ◽  
The Rich

Two-dimensional electrons in an AlAs quantum well occupy multiple conduction-band minima at the X-points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the standard GaAs electrons, and are highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.

Pressure dependence of the electronic effective mass and effective g-factor in the narrow gap semiconductor InSb

1986 ◽  
Vol 135 (2) ◽  
pp. K129-K132 ◽  
Author(s):  
S. Huant ◽  
L. Dmowski ◽  
M. Baj ◽  
L. C. Brunel
Keyword(s):  
Effective Mass ◽  
Pressure Dependence ◽  
Narrow Gap ◽  
G Factor

Effective mass and Landé g-factor in Si-MOSFETs near the critical density

2014 ◽  
Vol 64 (3) ◽  
pp. 424-428
Author(s):  
Lhoussine Limouny ◽  
Abdelhamid El Kaaouachi ◽  
Chi-Te Liang
Keyword(s):  
Effective Mass ◽  
Critical Density ◽  
G Factor

Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

2018 ◽  
Vol 52 (1) ◽  
pp. 12-18 ◽  
Author(s):  
S. V. Gudina ◽  
V. N. Neverov ◽  
E. V. Ilchenko ◽  
A. S. Bogolubskii ◽  
G. I. Harus ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Electron Effective Mass ◽  
G Factor

Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations

2020 ◽  
Vol 54 (8) ◽  
pp. 982-990
Author(s):  
V. N. Neverov ◽  
A. S. Bogolubskii ◽  
S. V. Gudina ◽  
S. M. Podgornykh ◽  
K. V. Turutkin ◽  
...  
Keyword(s):  
Effective Mass ◽  
G Factor ◽  
Shubnikov De Haas Oscillations
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