Improvement of remanent polarization of CeO2–HfO2 solid solution thin films on Si substrates by chemical solution deposition

2020 ◽  
Vol 117 (21) ◽  
pp. 212904
Author(s):  
Shuaizhi Zheng ◽  
Zidong Zhao ◽  
Zhaotong Liu ◽  
Binjian Zeng ◽  
Lu Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd3+−substituted Bismuth Titanate Thin Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Hiroshi Uchida ◽  
Seiichiro Koda ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Takayuki Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

ABSTRACTTi-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)4Ti3O12(BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50)1-(x/12)(Ti3.00-xVx)O15(x= 0 ∼ 0.09), were fabricated on (111)Pt/Ti/ SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Influence of Excess Potassium on Structural and Ferroelectric Properties of Lead-Free Bi0.5K0.5TiO3 Thin Films

2021 ◽  
Vol 21 (4) ◽  
pp. 2681-2686
Author(s):  
Nguyen Ngoc Minh ◽  
Bui Van Dan ◽  
Nguyen Duc Minh ◽  
Guus Rijnders ◽  
Ngo Duc Quan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Chemical Solution ◽  
Ferroelectric Films ◽  
Solution Deposition ◽  
Si Substrates ◽  
Excess Amount

Lead-free Bi0.5K0.5TiO3 (BKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The influence of the excess potassium on the microstructures and the ferroelectric properties of the films was investigated in detail. The results showed that the BKT films have reached the well-crystallized state in the single-phase perovskite structure with 20 mol.% excess amount of potassium. For this film, the ferroelectric properties of the films were significantly enhanced. The remnant polarization (Pr) and maximum polarization (Pm) reached the highest values of 9.4 μC/cm2 and 32.2 μC/cm2, respectively, under the electric field of 400 kV/cm.

BiFeO3(00l)/LaNiO3/Si thin films with enhanced polarization: an all-solution approach

RSC Advances ◽  
2016 ◽  
Vol 6 (82) ◽  
pp. 78629-78635 ◽  
Author(s):  
Linghua Jin ◽  
Xianwu Tang ◽  
Renhuai Wei ◽  
Bingbing Yang ◽  
Jie Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Solution Approach ◽  
Si Substrates ◽  
Multiferroic Bifeo

Multiferroic BiFeO3 (BFO) thin films with a thickness larger than 400 nm are grown on solution-derived LaNiO3 coated Si substrates via chemical solution deposition.

scholarly journals Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+ co-doped K0.5Na0.5NbO3 thin films

2020 ◽  
Vol 8 (15) ◽  
pp. 5102-5111
Author(s):  
Nikolai Helth Gaukås ◽  
Julia Glaum ◽  
Mari-Ann Einarsrud ◽  
Tor Grande
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Co Doped

Doped K0.5Na0.5NbO3 films with good ferroelectric and dielectric properties were prepared by aqueous chemical solution deposition on platinized Si substrates.

Preparation of SrMoO4 thin films on Si substrates by chemical solution deposition

2008 ◽  
Vol 310 (4) ◽  
pp. 789-793 ◽  
Author(s):  
Hechang Lei ◽  
Xuebin Zhu ◽  
Yuping Sun ◽  
Wenhai Song
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

Structure and Electrical Properties of Highly (100)-Oriented Ba(Zr0.05Ti0.95)O3 Films Prepared by Chemical Solution Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 101-104 ◽  
Author(s):  
Yi Ping Guo ◽  
Kazuyuki Suzuki ◽  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
Kazumi Kato
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Deposition Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Orientation Degree ◽  
Oriented Films

A chemical solution deposition process for preparation of highly (100)-oriented Ba(Zr0.05Ti0.95)O3 films was developed. The orientation degree of Ba(Zr0.05Ti0.95)O3 thin films prepared by this process can reach up to 99.1%. The electrical properties of the (100)-oriented films prepared by this process have been studied. The Ba(Zr0.05Ti0.95)O3 films with a thickness of about 270 nm show a dielectric constant of ∼740 and a loss tangent of ∼3%. The remanent polarization (2Pr) and coercive field (2Ec) are 3.2 μC/cm2 and 34 kV/cm, respectively.

Mössbauer Spectra of 57Fe-Enriched BiFeO3 Thin Films Fabricated on SiO2/Si Substrates by Chemical Solution Deposition Process

2013 ◽  
Vol 582 ◽  
pp. 63-66 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Yoshinori Tsukamoto ◽  
Soichiro Okamura ◽  
Yutaka Yoshida
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Perovskite Phase ◽  
Precursor Solution ◽  
Deposition Process ◽  
Molar Ratio ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Mixture Phase

sup>57Fe-enriched BiFeO3 (BFO) thin films were fabricated on SiO2/Si substrates from a stoichiometric precursor solution by chemical solution deposition process. The Bi/Fe molar ratio of the thin films decreased from 0.95 to 0.80 with increase in the sintering temperature. A perovskite phase and flat surface were obtained in the BFO thin films sintered at 500 and 600 °C. However, the 57Fe Mössbauer spectra showed a mixture phase due to amorphous and/or Bi2Fe4O9 phases in the BFO thin films. The valence state of Fe ions of the BFO thin films was confirmed to be only Fe3+ by the Mössbauer spectra.

Sign in / Sign up

Export Citation Format

Share Document