AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Tsung-Han Yang; Jesse Brown; Kai Fu; Jingan Zhou; Kevin Hatch; Chen Yang; Jossue Montes; Xin Qi; Houqiang Fu; Robert J. Nemanich; Yuji Zhao

doi:10.1063/5.0027885

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

Applied Physics Letters ◽

10.1063/5.0027885 ◽

2021 ◽

Vol 118 (7) ◽

pp. 072102

Author(s):

Tsung-Han Yang ◽

Jesse Brown ◽

Kai Fu ◽

Jingan Zhou ◽

Kevin Hatch ◽

...

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors

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Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics

Journal of Materials Research ◽

10.1557/jmr.2017.363 ◽

2017 ◽

Vol 32 (18) ◽

pp. 3458-3468 ◽

Cited By ~ 7

Author(s):

Jesús A. del Alamo ◽

Alex Guo ◽

Shireen Warnock

Keyword(s):

Power Electronics ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

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Abstract

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AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric

IEEE Electron Device Letters ◽

10.1109/led.2012.2237499 ◽

2013 ◽

Vol 34 (3) ◽

pp. 375-377 ◽

Cited By ~ 12

Author(s):

Taku Sato ◽

Junich Okayasu ◽

Masahiko Takikawa ◽

Toshi-kazu Suzuki

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

High K ◽

Very High

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Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Applied Physics Express ◽

10.7567/apex.9.084102 ◽

2016 ◽

Vol 9 (8) ◽

pp. 084102 ◽

Cited By ~ 8

Author(s):

Zhili Zhang ◽

Shuangjiao Qin ◽

Kai Fu ◽

Guohao Yu ◽

Weiyi Li ◽

...

Keyword(s):

Ionic Liquid ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Gate Recess

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Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn02 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN02 ◽

Cited By ~ 2

Author(s):

Shu Yang ◽

Sen Huang ◽

Michael Schnee ◽

Qing-Tai Zhao ◽

Jürgen Schubert ◽

...

Keyword(s):

Ion Implantation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under different bias conditions

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab3d52 ◽

2019 ◽

Vol 52 (48) ◽

pp. 485106 ◽

Cited By ~ 2

Author(s):

Shanjie Li ◽

Zhiyuan He ◽

Rui Gao ◽

Yiqiang Chen ◽

Yang Liu ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Time Dependent ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Physical Mechanisms ◽

Electron Mobility Transistors

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Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110202 ◽

2011 ◽

Vol 50 ◽

pp. 110202 ◽

Cited By ~ 25

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Instability ◽

Electron Mobility Transistors

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Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5042261 ◽

2018 ◽

Vol 36 (4) ◽

pp. 041203 ◽

Cited By ~ 1

Author(s):

Chaker Fares ◽

Fan Ren ◽

Stephen J. Pearton ◽

Gwangseok Yang ◽

Jihyun Kim ◽

...

Keyword(s):

Alpha Particle ◽

Electron Mobility ◽

Irradiation Dose ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Particle Irradiation

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Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Chinese Physics B ◽

10.1088/1674-1056/20/2/027304 ◽

2011 ◽

Vol 20 (2) ◽

pp. 027304 ◽

Cited By ~ 9

Author(s):

Xiao-Hua Ma ◽

Cai-Yuan Pan ◽

Li-Yuan Yang ◽

Hui-You Yu ◽

Ling Yang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Gate Recess

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Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

Journal of Applied Physics ◽

10.1063/1.3488641 ◽

2010 ◽

Vol 108 (7) ◽

pp. 074502 ◽

Cited By ~ 20

Author(s):

Seshadri Kolluri ◽

Stacia Keller ◽

David Brown ◽

Geetak Gupta ◽

Siddharth Rajan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors

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AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4Gate Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2278 ◽

2003 ◽

Vol 42 (Part 1, No. 4B) ◽

pp. 2278-2280 ◽

Cited By ~ 37

Author(s):

Masaru Ochiai ◽

Mitsutoshi Akita ◽

Yutaka Ohno ◽

Shigeru Kishimoto ◽

Kouichi Maezawa ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Gan Heterostructure

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