Electric field tuning of the properties of monolayer hexagonal boron phosphide

2020 ◽  
Vol 128 (21) ◽  
pp. 215703
Author(s):  
Mohsen Yarmohammadi ◽  
Kavoos Mirabbaszadeh
Keyword(s):  
Electric Field ◽  
Boron Phosphide

Stress- and electric-field-induced band gap tuning in hexagonal boron phosphide layers

2019 ◽  
Vol 31 (46) ◽  
pp. 465502 ◽  
Author(s):  
Ying Wang ◽  
Changbao Huang ◽  
Dong Li ◽  
Feng Huang ◽  
Xueyong Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Boron Phosphide ◽  
Band Gap Tuning

Electronic structure and optical properties of novel monolayer gallium nitride and boron phosphide heterobilayers

2018 ◽  
Vol 20 (44) ◽  
pp. 28124-28134 ◽  
Author(s):  
A. Mogulkoc ◽  
Y. Mogulkoc ◽  
M. Modarresi ◽  
B. Alkan
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Gallium Nitride ◽  
Electric Field ◽  
Band Gap ◽  
External Electric Field ◽  
Charge Distribution ◽  
Energy Band ◽  
Energy Band Gap ◽  
Boron Phosphide

An external electric field modifies the electronic structure, charge distribution and energy band gap in the heterobilayer of gallium nitride/boron phosphide.

Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide

2016 ◽  
Vol 18 (24) ◽  
pp. 16229-16236 ◽  
Author(s):  
Xianping Chen ◽  
Chunjian Tan ◽  
Qun Yang ◽  
Ruishen Meng ◽  
Qiuhua Liang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Multilayer Structure ◽  
2D Systems ◽  
Two Dimensional ◽  
Direct Bandgap ◽  
Boron Phosphide ◽  
Stacking Order

Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field).

Resolution in photoelectron microscopy

1991 ◽  
Vol 49 ◽  
pp. 458-459
Author(s):  
G. F. Rempfer
Keyword(s):  
Electron Microscopy ◽  
Electric Field ◽  
Ultraviolet Light ◽  
Uniform Field ◽  
Virtual Image ◽  
Lens System ◽  
Photoemission Electron Microscopy ◽  
Planar Electrode ◽  
Electron Lens ◽  
Photoemission Electron

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.

Field-assisted ionization theory for microscopists

1994 ◽  
Vol 52 ◽  
pp. 820-821
Author(s):  
Patrick P. Camus
Keyword(s):  
Electric Field ◽  
Electron Tunneling ◽  
Ionization Probability ◽  
Critical Distance ◽  
Tunneling Probability ◽  
Field Ionization ◽  
Radius Of Curvature ◽  
Field Evaporation ◽  
A Value ◽  
Ion Emission

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).

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