scholarly journals Effect of in situ degradation on the atomic structure and optical properties of GaN-based green light-emitting diodes

2020 ◽  
Vol 117 (21) ◽  
pp. 212103
Author(s):  
Q. Liu ◽  
D. Han ◽  
S. Ma ◽  
X. Hao ◽  
Y. Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Atomic Structure ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
In Situ Degradation

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

scholarly journals Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Bing Xu ◽  
Hai Tao Dai ◽  
Shu Guo Wang ◽  
Fu-Chuan Chu ◽  
Chou-Hsiung Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Radiative Decay ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Transmission Electron ◽  
Green Led

We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs). Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM), which is the explanation for the red-shift of photoluminescence (PL). Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

2020 ◽  
Vol 107 ◽  
pp. 110129
Author(s):  
Qingming Liu ◽  
Dan Han ◽  
Lin Shang ◽  
Xiaodong Hao ◽  
Yanyan Hou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting

Efficient organic manganese (II) bromide green-light-emitting diodes enabled by manipulating hole and electron transport layer

2021 ◽  
Author(s):  
Hyunsik Im ◽  
Atanu Jana ◽  
Vijaya Gopalan Sree ◽  
QIANKAI BA ◽  
Seong Chan Cho ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices

Lead-free, non-toxic transition metal-based phosphorescent organic–inorganic hybrid (OIH) compounds are promising for next-generation flat-panel displays and solid-state light-emitting devices. In the present study, we fabricate highly efficient phosphorescent green-light-emitting diodes...

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