Stark shift on the heavy hole exciton in a group III-V semiconductor quantum dot

2020 ◽  
Author(s):  
N. R. Senthil Kumar ◽  
A. John Peter
Keyword(s):  
Quantum Dot ◽  
Heavy Hole ◽  
Stark Shift ◽  
Group Iii ◽  
Semiconductor Quantum Dot ◽  
Group Iii V Semiconductor

scholarly journals Strain Distributions in Group IV and III-V Semiconductor Quantum Dots

2013 ◽  
Vol 7 ◽  
pp. 36-48
Author(s):  
K.A.I.L. Wijewardena Gamalath ◽  
M.A.I.P. Fernando
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Group Iv ◽  
Group Iii ◽  
Elastic Tensor ◽  
Hydrostatic Strain ◽  
Anisotropic Elastic ◽  
Group Iii V Semiconductor

A theoretical model was developed using Green’s function with an anisotropic elastic tensor to study the strain distribution in and around three dimensional semiconductor pyramidal quantum dots formed from group IV and III-V material systems namely, Ge on Si, InAs on GaAs and InP on AlP. A larger positive strain in normal direction which tends to zero beyond 6nm was observed for all three types while the strains parallel to the substrate were negative. For all the three types of quantum dots hydrostatic strain and biaxial strain along x and z directions were not linear but described a curve with a maximum positive value near the base of the quantum dot. The hydrostatic strain in x-direction is mostly confined within the quantum dot and practically goes to zero outside the edges of the quantum dot. For all the three types, the maximum hydrostatic and biaxial strains occur in x-direction around -1nm and around 2nm in z-direction. The negative strain in x-direction although realtively weak penetrate more deeper to the substrate than hydrostatic strain.The group IV substrate gave larger hydrostatic and biaxial strains than the group III-V semiconductor combinations and InAs /GaAs was the most stable. The results indicated that the movements of atoms due to the lattice mismatch were strong for group III-V.

Realisation of a photonic link between a trapped ion and a semiconductor quantum dot

2014 ◽  
Author(s):  
Claire Le Gall ◽  
Robert Stockill ◽  
Matthias Steiner ◽  
Hendrik-Marten Meyer ◽  
Clemens Matthiesen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Trapped Ion ◽  
Semiconductor Quantum Dot

Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot

2011 ◽  
Vol 99 (18) ◽  
pp. 181109 ◽  
Author(s):  
T. Nakaoka ◽  
Y. Tamura ◽  
T. Saito ◽  
T. Miyazawa ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Semiconductor Quantum Dot
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