A comparison of indium arsenide antimonide and mercury cadmium telluride as long wavelength infrared detector materials

2020 ◽  
Vol 128 (7) ◽  
pp. 075704
Author(s):  
Anthony J. Ciani ◽  
Christoph H. Grein ◽  
Wendy L. Sarney ◽  
Stefan P. Svensson ◽  
Dmitri V. Donetski ◽  
...  
1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.


2000 ◽  
Vol 10 (01) ◽  
pp. 47-53
Author(s):  
G. J. BROWN ◽  
F. SZMULOWICZ ◽  
K. MAHALINGAM ◽  
A. SAXLER ◽  
R. LINVILLE ◽  
...  

New infrared (IR) detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous space-based infrared imaging applications. To meet these stringent requirements, new materials must be designed and grown using semiconductor heterostructures, such as quantum wells and superlattices, to tailor new optical and electrical properties unavailable in the current generation of materials. One of the most promising materials is a strained layer supperlattice (SLS) composed of thin InAs and GaInSb layers. While this material shows theoretical and early experimental promise, there are still several materials growth and processing issues to be addressed before this material can be transitioned to the next generation of infrared detector arrays. Our research is focused on addressing the basic materials design, growth, optical properties, and electronic transport issue of these superlattices.


RSC Advances ◽  
2018 ◽  
Vol 8 (69) ◽  
pp. 39579-39592 ◽  
Author(s):  
Shonak Bansal ◽  
Kuldeep Sharma ◽  
Prince Jain ◽  
Neha Sardana ◽  
Sanjeev Kumar ◽  
...  

We present a high-performance bilayer graphene (BLG) and mercury cadmium telluride (Hg1−xCdx=0.1867Te) heterojunction based very long wavelength infrared (VLWIR) conductive photodetector.


2013 ◽  
Vol 42 (11) ◽  
pp. 3186-3190 ◽  
Author(s):  
J. Wenisch ◽  
H. Bitterlich ◽  
M. Bruder ◽  
P. Fries ◽  
R. Wollrab ◽  
...  

1986 ◽  
Vol 90 ◽  
Author(s):  
J. W. Cook ◽  
K. A. Harris ◽  
J. F. Schetzina

ABSTRACTThe growth of thin films of mercury-based materials by molecular beam epitaxy (MBE) presents significant experimental problems which must be overcome in order to successfully grow infrared detector materials such as mercury cadmium telluride (MCT). Many of the problems associated with the use of Hg in MBE arise from its high room temperature vapor pressure (2 mTorr) and its low sticking coefficient. The MBE system must be designed for Hg usage by considering such things as the ultra high vacuum pumping system, the Hg source, Hg containment, and Hg removal. In addition, Hg is a toxic heavy metal and must be handled appropriately. Other problems involved with the growth of MCT are associated with the design of the MBE furnaces which are used to evaporate cadmium telluride and tellurium.


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