Effect of biaxial strain on electronic transport coefficients of monolayer MoS2

2020 ◽  
Author(s):  
Gurpal Singh Khosa ◽  
Ranjan Kumar ◽  
Shuchi Gupta
2017 ◽  
Vol 24 (10) ◽  
pp. 102701
Author(s):  
G. Faussurier ◽  
C. Blancard ◽  
P. Combis ◽  
A. Decoster ◽  
L. Videau

1984 ◽  
Vol 62 (7) ◽  
pp. 692-700 ◽  
Author(s):  
L. E. Ballentine ◽  
J. E. Hammerberg

We describe a method of computing electronic transport coefficients in liquid and amorphous metals by numerical evaluation of the Kubo formula for a cluster of a few hundred atoms. s and d states are treated equally, and no assumptions need be made about the number of carriers per atom. Finite size and shape effects, and other computational aspects, are examined. The method is applied to liquid La. The calculated (measured) values are 151 μΩ∙cm (135 μΩ∙cm) for the resistivity, and −7 ± 1 μV/K (−7.5 μV/K) for the thermoelectric power. The relative contributions of s and d states to electronic transport are computed, and we find the d states to be dominant.


2007 ◽  
Vol 76 (7) ◽  
Author(s):  
N. M. R. Peres ◽  
J. M. B. Lopes dos Santos ◽  
T. Stauber

2020 ◽  
Author(s):  
Alfredo Correa ◽  
Xavier Andrade ◽  
Alicia Welden ◽  
Jane Herriman ◽  
Rafi Ullah

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