Structural and magnetization dynamic properties of single crystalline Bi-doped YIG thin film grown on GGG substrate having different planes

2020 ◽  
Author(s):  
G. Gurjar ◽  
Vinay Sharma ◽  
S. Patnaik ◽  
Bijoy K. Kuanr
Keyword(s):  
Thin Film ◽  
Dynamic Properties ◽  
Single Crystalline ◽  
Magnetization Dynamic

scholarly journals The thin film bulk acoustic wave resonator based on single-crystalline 43○Y-cut lithium niobate thin films

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075002
Author(s):  
Xiaoyuan Bai ◽  
Yao Shuai ◽  
Lu Lv ◽  
Ying Xing ◽  
Jiaoling Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lithium Niobate ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Single Crystalline ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates

2010 ◽  
Vol 31 (5) ◽  
pp. 422-424 ◽  
Author(s):  
William Hsu ◽  
Cheng-Yi Peng ◽  
Cheng-Ming Lin ◽  
Yen-Yu Chen ◽  
Yen-Ting Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Thin Film Transistors ◽  
Single Crystalline

Observation of the growth of MAPbBr3 single-crystalline thin film based on space-limited method

2018 ◽  
Vol 501 ◽  
pp. 27-33 ◽  
Author(s):  
Lipeng Han ◽  
Cai Liu ◽  
Lili Wu ◽  
Jingquan Zhang
Keyword(s):  
Thin Film ◽  
Single Crystalline

Broadband Nonlinear Optical Response of Single-Crystalline Bismuth Thin Film

2019 ◽  
Vol 11 (39) ◽  
pp. 35863-35870
Author(s):  
Lin Du ◽  
Donglin Lu ◽  
Jie Li ◽  
Ke Yang ◽  
Lingling Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Nonlinear Optical ◽  
Optical Response ◽  
Nonlinear Optical Response ◽  
Single Crystalline

Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

2002 ◽  
Vol 747 ◽  
Author(s):  
K. Nomura ◽  
H. Ohta ◽  
K. Ueda ◽  
T. Kamiya ◽  
M. Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Defect Density ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Oxide Semiconductor ◽  
Single Crystalline ◽  
Transparent Oxide ◽  
Improved Performance ◽  
Transparent Oxide Semiconductors

ABSTRACTTransparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

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